Datasheet > TV06B280K-G

TV06B280K-G

更新时间： 2024-02-05 04:59:30

品牌	Logo	应用领域
上华 - COMCHIP		二极管
页数	文件大小	规格书
7页	129K
描述
Trans Voltage Suppressor Diode, 28V V(RWM), Unidirectional,

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技术参数
数据手册

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TV06B280K-G 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8541.10.00.50	风险等级：	5.75
击穿电压标称值：	34.55 V	最大钳位电压：	50 V
二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE	极性：	UNIDIRECTIONAL
最大重复峰值反向电压：	28 V	子类别：	Transient Suppressors
表面贴装：	YES

TV06B280K-G 数据手册

SMD Transient Voltage Suppressor

TV06B5V0-G Thru. TV06B441-G

Working Peak Reverse voltage: 5.0 ~ 440Volts

Power Dissipation: 600 Watts

RoHS Device

Features

SMB/DO-214AA

-Ideally for surface mount applications.

-Easy pick and place.

-Plastic package has Underwriters Lab.

flammability classification 94V-0.

0.155(3.94)

0.130(3.30)

0.087(2.20)

0.077(1.96)

-Typical IR less than 1μA above 10V.

0.191(4.85)

0.171(4.35)

-Fast response time: typically less than 1nS for

uni-direction, less than 5nS for bi-directional,

form 0V to BV min.

0.012(0.30)

0.006(0.15)

0.096(2.44)

0.083(2.13)

Mechanical Data

-Case: JEDEC DO-214AA molded plastic.

0.008(0.20)

0.001(0.02)

0.060(1.52)

0.030(0.75)

-Terminals: solderable per MIL-STD-750,

method 2026

0.216(5.50)

0.201(5.10)

-Polarity: Cathode band denoted.

-Weight: 0.093 gram approx.

Dimensions in inches and (millimeter)

Maximum Ratings and Electrical Characteristics

Rating at 25 ^OC ambient temperature unless otherwise specified.

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Characteristics

Symbol

PPPM

Value

600

Units

Peak power dissipation on 10/1000μS

waveform (Note 1, Fig.1)

Peak pulse current on 10/1000μS waveform

(Note 1, Fig.3)

IPPM

See Next Table

Steady state power dissipation at TL=75

(Note 2)

^OC

PM(AV)

IFSM

5.0

100

Peak forward surge current, 8.3mS single half

sine-wave superimposed on rated load, uni-

directional only (Note 3)

Maximum instantaneous forward voltage at

35.0A for uni-directional only (Note 3, 4)

3.5/5.0

^OC

Maximum operation junction temperature

Storage temperature range

150

TSTG

-55 to +150

Note:

1. Non-repetitive current pulse, per Fig. 5 and derated above TA=25 ^OC per Fig.1

2. Measured on 8.3 mS single half sine-wave or equivalent square wave, duty cycle=4 pulse per minute maximum.

3. VF<3.5V for devices of VBR <200V and VF <5.0V for devices of VBR >201V

REV:B

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