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TSS54U PDF预览

TSS54U

更新时间: 2024-01-03 05:40:58
品牌 Logo 应用领域
TSC 肖特基二极管
页数 文件大小 规格书
2页 61K
描述
0.2Amp Surface Mount Schottky Barrier Diode

TSS54U 技术参数

生命周期:Obsolete包装说明:R-PBCC-N2
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.83配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:R-PBCC-N2元件数量:1
端子数量:2最高工作温度:125 °C
最低工作温度:-65 °C最大输出电流:0.2 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:CHIP CARRIER最大功率耗散:0.15 W
最大重复峰值反向电压:30 V最大反向恢复时间:0.005 µs
表面贴装:YES技术:SCHOTTKY
端子形式:NO LEAD端子位置:BOTTOM

TSS54U 数据手册

 浏览型号TSS54U的Datasheet PDF文件第2页 
TSS54U  
0.2Amp Surface Mount Schottky Barrier  
Diode  
Pb  
RoHS  
COMPLIANCE  
0603  
Features  
—
—
—
—
—
Designed for mounting on small surface  
Extremely thin/leadless package  
Low capacitance  
Low forward voltage drop  
High temperature soldering:  
260oC/10 seconds at terminals  
Chip version in 0603  
—
ITEM  
L
0603  
0.071(1.80)  
0.063(1.60)  
0.039(1.00)  
0.031(0.80)  
0.033(0.85)  
0.027(0.70)  
0.018(0.45)  
Typical  
Mechanical Data  
W
T
—
—
Case: 0603 Standard package, molded plastic  
Terminals: Gold plated, solderable per  
MIL-STD-750, method 2026.  
C
D
—
—
—
—
Polarity: Indicated by cathode band  
Mounting position: Any  
Package code: RZ  
0.028(0.70)  
Typical  
Weight: 0.003 gram (approximately)  
Dimensions in inches and (millimeters)  
Maximum Ratings and Electrical characteristics  
Rating at 25 oC ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%  
Type Number  
Symbol  
0603  
Units  
Repetitive Peak Reverse Voltage  
VRRM  
30  
V
DC Reverse Voltage  
RMS Reverse Voltage  
VR  
30  
21  
V
V
VR(RMS)  
Average Forward Current  
IO  
IFRM  
200  
300  
mA  
mA  
Repetiitive Peak Forward Current  
Peak Forward Surge Current 8.3ms single half  
sine-wave superimposed on rate load (JEDEC  
method)  
Power Dissipation  
Forward Voltage  
IFSM  
Pd  
600  
mA  
150  
0.24  
0.32  
0.4  
0.5  
1.0  
2
mW  
IF=0.1mA  
IF=1mA  
IF=10mA  
IF=30mA  
IF=100mA  
VR=25V  
VF  
V
Reverse Leakage Current  
IR  
uA  
pF  
Typical capacitance between terminals  
VR=1V, f =1.0MHz reverse voltage  
Reverse Recovery Time  
(IF=IR=10mA, Irr=0.1 x IR, RL=100Ώ)  
Junction Temperature  
CJ  
10  
5
Trr  
nS  
TJ  
TSTG  
-65 to + 125  
-65 to + 125  
oC  
oC  
Storage Temperature  
Version: A07  

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