Datasheet > TSMF36A

TSMF36A

更新时间： 2024-04-09 18:57:20

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		电视
页数	文件大小	规格书
5页	507K
描述
36V,200W,Surface Mount TVS

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

TSMF36A 数据手册

Product Specification

Transient Voltage Suppressor

TSMF5V0A - TSMF220A

Features

 Low profile package with built-in strain relief for SMT applications

 Low incremental surge resistance, excellent clamping capability

 200W peak pulse power capability with very fast response time

 High temperature soldering guaranteed: 260°C / 10s

 RoHS compliant with Halogen-free

 Qualified to AEC-Q101 Standards

Mechanical Data

 Case: SOD-123FL molded plastic

 Molding compound: UL flammability classification rating 94V-0

 Terminals: Solder plated; solderable per MIL- STD-202, Method 208

Maximum Ratings (@T_A= 25°C unless otherwise specified)

Parameter

Symbol

Value

Unit

Peak power dissipation with a 10/1000μs waveform ^*1

Peak pulse current with a 10/1000μs waveform ^*1

Forward Voltage @ I_F= 1A

P_PPM

I_PP

200

see E. Characteristics

V_F

1.6

R_θJA

R_θJC

R_θJL

Typical thermal resistance^*2

°C/W

°C

Operating junction and storage temperature range

T_J, T_STG

-55 ~ +150

Note *1: Non-repetitive current pulses and derated above T_A= 25°C

Note *2: Device mounted on p.c.b. with 10 mm x 20 mm x 0.1 mm copper pad area

TVP0018A

www.gmesemi.com

12 3 4 5

下载PDF

与TSMF36A相关器件

型号	品牌	描述	获取价格	数据表
TSMF36CA	Galaxy Microelectronics	36V,200W,Surface Mount TVS	获取价格
TSMF3700	VISHAY	GaAlAs/GaAlAs Infrared Emitting Diode in SMT Package	获取价格
TSMF3710	VISHAY	High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero	获取价格
TSMF3710-GS08	VISHAY	High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero	获取价格
TSMF3710-GS18	VISHAY	High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero	获取价格
TSMF40A	Galaxy Microelectronics	40V,200W,Surface Mount TVS	获取价格