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TSMF3700 PDF预览

TSMF3700

更新时间: 2024-11-27 05:52:59
品牌 Logo 应用领域
威世 - VISHAY 可见光LED光电二极管
页数 文件大小 规格书
6页 127K
描述
GaAlAs/GaAlAs Infrared Emitting Diode in SMT Package

TSMF3700 技术参数

是否Rohs认证:符合生命周期:Obsolete
Reach Compliance Code:unknown风险等级:5.77
Is Samacsys:N颜色@波长:INFRARED
最大正向电流:0.1 A最大正向电压:1.7 V
JESD-609代码:e3最高工作温度:100 °C
最低工作温度:-55 °C总高度:1.75 mm
峰值波长:870 nm最大反向电压:5 V
子类别:Visible LEDs端子面层:Tin (Sn)
视角:120 degBase Number Matches:1

TSMF3700 数据手册

 浏览型号TSMF3700的Datasheet PDF文件第2页浏览型号TSMF3700的Datasheet PDF文件第3页浏览型号TSMF3700的Datasheet PDF文件第4页浏览型号TSMF3700的Datasheet PDF文件第5页浏览型号TSMF3700的Datasheet PDF文件第6页 
TSMF3700  
Vishay Semiconductors  
High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double  
Hetero  
Description  
TSMF3700 is a high speed infrared emitting diode in  
GaAlAs on GaAlAs double hetero (DH) technology in  
a miniature PL-CC-2 SMD package.  
It has been designed to meet the increasing demand  
on optoelectronic devices for surface mounting.  
The package consists of a lead frame which is sur-  
rounded with a white thermoplast. The reflector inside  
the package is filled up with clear epoxy.  
94 8553  
Features  
• SMT IRED with extra high radiant power  
• Low forward voltage  
• Compatible with automatic placement equipment  
• EIA and ICE standard package  
Applications  
Infrared source in tactile keyboards  
IR diode in low space applications  
• Suitable for infrared, vapor phase and wavesolder  
process  
• Available in 8 mm tape  
High performance PCB mounted infrared sensors  
High power infrared emitter for miniature light barriers  
• Suitable for pulse current operation  
• Extra wide angle of half intensity ϕ = ꢀ0ꢁ  
• Peak wavelength λ = 870 nm  
p
• High reliability  
• Lead-free component  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/9ꢀ/EC  
Absolute Maximum Ratings  
Tamb = 25 ꢁC, unless otherwise specified  
Parameter  
Reverse Voltage  
Test condition  
Symbol  
VR  
Value  
5
Unit  
V
Forward current  
IF  
IFM  
IFSM  
PV  
100  
mA  
mA  
A
Peak Forward Current  
Surge Forward Current  
Power Dissipation  
tp/T = 0.5, tp = 100 µs  
tp = 100 µs  
200  
1
1ꢀ0  
mW  
ꢁC  
Junction Temperature  
Operating Temperature Range  
Storage Temperature Range  
Soldering Temperature  
Tj  
100  
Tamb  
Tstg  
Tsd  
- 55 to + 100  
- 55 to + 100  
2ꢀ0  
ꢁC  
ꢁC  
t 10 sec  
ꢁC  
Thermal Resistance Junction/  
Ambient  
RthJA  
450  
K/W  
Document Number 81032  
Rev. 1.4, 08-Mar-05  
www.vishay.com  
1

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Infrared LED, 2.4mm, 1-Element, 870nm, MINIATURE, PLASTIC, SMD, LCC-2