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TSMBJ10L12C

更新时间： 2023-06-15 00:00:00
品牌 Logo 应用领域
美高森美 - MICROSEMI /
页数 文件大小 规格书
1页 167K
描述
Trans Voltage Suppressor Diode, Bidirectional, 1 Element, Silicon

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TSMBJ10L12C 数据手册

  
Scottsdale, AZ  
8700 E. Thomas Road  
Scottsdale, AZ 85252  
(602) 941-6300  
TSMBJ10L05C  
and  
Progress Powered by Technology  
TM  
Microsemi  
TSMBJ10L12C  
Umbrella of Protection  
Features  
Bi-Directional  
100 Amp  
5 and 12 Volts  
Thyristor Surge  
Protective  
Device  
Bidirectional Transient Voltage Protection  
•
•
•
•
•
•
•
•
Surge Capabilities up to 100 Amps @ 10/1000µs or 300 Amps @ 8/20µs (note 2, 5)  
Positive Resistance Breakover Voltages  
Clamping Speeds of Nanoseconds  
Oxide-Glass Passivated Junctions  
High Off-State Impedance (low leakage) and Low On-State Voltage (crowbar action)  
Encapsulating material meets UL94VO Requirements  
ISO 9001 Certified  
(TSPD)  
Maximum Ratings  
Operating Temperature: -40°C to +150°C (note 5)  
•
Storage Temperature: -65°C to +150°C  
Repetitive Off-State Voltage (both directions): See Electrical Characteristics for VDRM  
•
•
MECHANICAL  
CHARACTERISTICS  
CASE STYLE: SMBJ (DO-214AA)  
Non-Repetitive Peak Impulse Current (IPPS): 100 A @ 10/1000µs or 300 A @ 8/20µs (note 5)  
Non-Repetitive Peak On-State Current (ITSM) @ 8.3ms (one-half cycle): 50 Amps  
•
•
and SMBG (DO-215AA)  
Electrical Characteristics @ 25°C  
SMBJ  
SMBG  
Rated Peak  
Impulse  
Current  
100 Amps  
@ 10/1000ms  
Rated  
Repetitive  
Off-State  
Voltage  
Off-State  
Leakage  
Current  
Breakdown  
Voltage  
Breakover  
Voltage  
On-State  
Voltage  
Holding  
Current  
Capacitance  
(1MH  
Z
)
A
C
A
@ I(BR) = 1mA  
(Note 4)  
@I  
T = 1A  
(Note 3)  
@VDRM  
(Note 1)  
(pulsed)  
B
B
Part Numbers  
(Note 6)  
V
DRM  
I
DRM  
V
(BR)  
V
(BO)  
V
T
I
H
CO  
@ 0  
PF  
V
Volts  
MAX.  
5
mA  
MAX.  
1
Volts  
MIN.  
8
Volts  
MAX.  
12.5  
25  
Volts  
MAX.  
3.0  
mA  
MIN.  
20  
E
MAX.  
50  
G
F
H
TSMBJ10L05C  
TSMBJ10L12C  
J
J
12  
1
18.5  
3.0  
20  
50  
D
Consult factory for additional voltage and holding current tolerance options.  
Notes:  
INCHES  
MILLIMETERS  
MIN / MAX  
MIN / MAX  
.077 / .083  
.160 / .180  
.130 / .155  
.205 / .220  
.075 / .095  
.235 / .255  
.015 / .030  
.030 / .060  
.038 / .058  
1. For rise times less than 1 kV/ms. For very fast rise times up to 1 kV/µs, V(BO) will be 110% ofV(BO) Max., The Max. I(BO) is 750mA.  
2. Critical rate of rise of on-state current is 100A/µs Max.  
A
B
C
D
E
F
G
H
J
1.96 / 2.10  
4.06 / 4.57  
3.30 / 3.94  
5.21 / 5.59  
1.91 / 2.41  
5.97 / 6.48  
0.38 / 0.76  
0.76 / 1.52  
0.97 / 1.47  
3. Maximum rate of rise of off-state voltage VDRM that will not trigger device is 5kV/µs (T  
4. Breakdown voltage V(BR) has a positive temperature coefficient of +0.1%/°C.  
5. Above 70°C, derate linearly to zero @ 150°C lead temperature.  
6. For different packages or die options replace part number prefix as follows:  
“TSMBJ” for surface mount DO-214AA with J-bend (as shown).  
“TSMBG” for surface mount DO-215AA with Gull Wing.  
“TSH” for DO-13 hermetic axial lead metal package.  
J = 70°C).  
“TSF” for T-18 axial lead plastic.  
“TSEP” for Case 1 axial, 0.040” diameter leads.  
“TSES” for Case 2 axial, 0.030” diameter leads.  
“TCD” for cellular die package.  
“TCH” for chip equivalent in hybrid applications.  
ADDITIONAL PACKAGE STYLES:  
For other package styles contact  
Microsemi Scottsdale’s TSPD Group  
for detail package dimensions.  
LEAD FINISH:  
Solder Dip or Lead Tin Plate.  
POLARITY: Bi-directional.  
Ⅲ Santa Ana: (714) 979-8220 Ⅲ Scottscale: (602) 941-6300 Ⅲ Colorado: (303) 469-2161 Ⅲ Watertown: (617) 926-0404 Ⅲ Chatsworth: (818) 701-4933  
Ⅲ Sertech Labs: (617) 924-9280 Ⅲ Ireland: (353) 65-40044 Ⅲ Bombay: (91) 22-832-002 Ⅲ Hong Kong: (852) 2692-1202  
Data Sheet SMCO310A 5/16/97  
1

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