Datasheet > TSBT30200CT

TSBT30200CT

更新时间： 2024-04-09 18:58:39

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
4页	522K
描述
30A,200V,Schottky Barrier Rectifiers

阅读下载

获取价格

如果您发现信息不准确，欢迎纠错

TSBT30200CT 数据手册

Planar MOS Schottky Barrier Rectifiers

TSBT30200CTG TSBTF30200CTG TSBTB30200CTG

Electrical Characteristics (@T_A=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Min.

Typ.

0.85

0.72

Max.

0.9

Units

I_F=15A,T_J=25℃

Forward Voltage

V_F*

0.78

I_F=15A,T_J=125℃

0.8

100

u A

V_R= Rated V_RRM,T_J=25℃

V_R= Rated _VRRM,T_J=125℃

Maximum Peak Reverse Current

I_R*

m A

*Pulse width < 300 uS, Duty cycle < 2%

Ratings and Characteristic Curves (T_A=25℃ unless otherwise noted)

Fig.1- Forward Derating Curve

Fig.2- Typical Junction Capacitance Per Diode

SKM0064A

www.gmesemi.com

123 4

下载PDF

型号	品牌	描述	获取价格	数据表
TSBT560-3DL8	Galaxy Microelectronics	5A,60V,Schottky Barrier Rectifiers	获取价格
TSBTB10100CT	Galaxy Microelectronics	10A,100V,Schottky Barrier Rectifiers	获取价格
TSBTB20100CT	Galaxy Microelectronics	20A,100V,Schottky Barrier Rectifiers	获取价格
TSBTB20100VCT	Galaxy Microelectronics	20A,100V,Schottky Barrier Rectifiers	获取价格
TSBTB20150CT	Galaxy Microelectronics	20A,150V,Schottky Barrier Rectifiers	获取价格
TSBTB30200CT	Galaxy Microelectronics	30A,200V,Schottky Barrier Rectifiers	获取价格