Datasheet > TS105-1

TS105-1

更新时间： 2024-01-16 02:10:11

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Thermosensors

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中文翻译

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数据手册

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TS105-1 数据手册

Thermosensors

TS105-1 / TS105-2

THERMOPILES are used for non-contact surface temperature measuring.

Any object emits infrared radiation. The radiation power is increasing with growing surface temperatures.

Based on this relation, THERMOPILES measure the emitted power and determine the object’s temperature

precisely.

Function Principle

THERMOPILES are based on the Seebeck effect, which is used since a long time for conventional

thermocouples. The application of micromechanics and thin film technology allows the production of

miniaturized and cost effective sensor elements.

silicon substrate

(cold junctions)

absorption area

(hot junctions)

SiNx-membrane

A multitude of thermojunctions deposited on a silicon substrate is connected in series to form a

THERMOPILE. The hot junctions are thermally insulated from the cold junctions on the substrate by etching a

self-supporting extremly thin membrane. An absorbing layer on the hot junctions transforms the incoming

radiation into heat. A voltage proportional to the radiation is generated by the thermoelectric effect. The

sensors are delivered in TO5-packages. Different housings and filter types can be selected to find an optimal

solution for each application. Chips without housing are available as well.

Technical Data

Filter

Parameter

Number of thermojunctions

Symbol

Unit

Value

100

Condition

100

Material

BiSb, NiCr

0.7 * 0,7

2.0 * 2.0

50 ± 15

-0.03 ± 0.02

typical 110

-0.52 ± 0.08

2.1 * 10⁸

0.35

Active Area

A_A

A_C

mm²

Chip Size

Resistance of Thermopiles

TC of resistance

Sensitivity of sensor

TC of sensitivity

Specific detectivity

Noise equivalent power

Noise voltage

25 °C

+25...+75 °C

25°C, 500 K, DC

+25...+75 °C

500 K, DC

kΩ

TCR

S_C

% / K

V / W

% / K

cm*Hz^1/2/ W

TCS

NEP

U_N

500 K, 1 Hz

nV / Hz^1/2

500 K, 1 Hz

Time constant

t63

40 ± 10

-20 ... 100

-40 ... 100

500 K, 1 Hz

Operation temperature

Storage temperature

°C

10 11 12 13 14

Reference Resistor

Resistance

Wavelengt h (um)

R_Ni

1000 ± 0.4%

6178 ± 1%

0 °C

Ω

TC of resistance

TCR_Ni

ppm / K

0 °C...100 °C

Function: R(T) = 1000Ω + 6,17*T*Ω, for detailled information see data sheet of reference resistor

Sensors in thin film technology

HL-Planartechnik GmbH

Hauert 13 44 227 Dortmund Tel.: ++49 / (0)231 / 97400 Fax.: ++49 / (0)231 / 974020

105_12_e_01

March 1999

中文翻译

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