TR8 SERIES
SILICON TRIACS
l
l
l
l
8 A RMS, 70 A Peak
TO-220 PACKAGE
(TOP VIEW)
Glass Passivated Wafer
400 V to 800 V Off-State Voltage
MT1
MT2
G
1
2
3
Max I of 50 mA (Quadrants 1 - 3)
GT
Pin 2 is in electrical contact with the mounting base.
absolute maximum ratings over operating case temperature (unless otherwise noted)
RATING
SYMBOL
VALUE
UNIT
TR8-400-70
TR8-600-70
TR8-700-70
TR8-800-70
400
600
Repetitive peak off-state voltage (see Note 1)
VDRM
V
700
800
Full-cycle RMS on-state current at (or below) 85°C case temperature (see Note 2)
Peak on-state surge current full-sine-wave (see Note 3)
Peak on-state surge current half-sine-wave (see Note 4)
Peak gate current
IT(RMS)
ITSM
ITSM
IGM
8
A
A
70
80
A
±1
A
Peak gate power dissipation at (or below) 85°C case temperature (pulse width £ 200 m s)
Average gate power dissipation at (or below) 85°C case temperature (see Note 5)
Operating case temperature range
PGM
PG(AV)
TC
2.2
W
W
°C
°C
°C
0.9
-40 to +110
-40 to +125
230
Storage temperature range
Tstg
Lead temperature 1.6 mm from case for 10 seconds
TL
NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1.
2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 85°C derate linearly to 110°C case temperature at
the rate of 320 mA/°C.
3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of on-state current.
Surge may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost.
4. This value applies for one 50-Hz half-sine-wave when the device is operating at (or below) the rated value of on-state current.
Surge may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost.
5. This value applies for a maximum averaging time of 20 ms.
electrical characteristics at 25°C case temperature (unless otherwise noted)
MIN
TYP
MAX
PARAMETER
TEST CONDITIONS
UNIT
Repetitive peak
off-state current
IDRM
VD = rated VDRM
supply = +12 V†
IG = 0
TC = 110°C
±2
mA
V
RL = 10 W
RL = 10 W
RL = 10 W
RL = 10 W
RL = 10 W
RL = 10 W
RL = 10 W
RL = 10 W
tp(g) > 20 m s
tp(g) > 20 m s
tp(g) > 20 m s
tp(g) > 20 m s
tp(g) > 20 m s
tp(g) > 20 m s
tp(g) > 20 m s
tp(g) > 20 m s
2
50
-50
-50
Peak gate trigger
current
Vsupply = +12 V†
Vsupply = -12 V†
Vsupply = -12 V†
-12
-9
IGTM
mA
V
20
Vsupply = +12 V†
0.7
-0.8
-0.8
0.9
2
-2
-2
2
Peak gate trigger
voltage
Vsupply = +12 V†
Vsupply = -12 V†
Vsupply = -12 V†
VGTM
† All voltages are with respect to Main Terminal 1.