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TPSMP22A-E3/85A

更新时间： 2024-01-22 18:40:22
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
5页 88K
描述
Trans Voltage Suppressor Diode, 18.8V V(RWM), Unidirectional,

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中文翻译

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TPSMP22A-E3/85A 技术参数

是否Rohs认证： 符合生命周期：Obsolete
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.10.00.50风险等级：5.84
击穿电压标称值：22 V最大钳位电压：30.6 V
二极管类型：TRANS VOLTAGE SUPPRESSOR DIODEJESD-609代码：e3
湿度敏感等级：1极性：UNIDIRECTIONAL
最大重复峰值反向电压：18.8 V子类别：Transient Suppressors
表面贴装：YES端子面层：Matte Tin (Sn)
Base Number Matches：1

TPSMP22A-E3/85A 数据手册

 浏览型号TPSMP22A-E3/85A的Datasheet PDF文件第2页浏览型号TPSMP22A-E3/85A的Datasheet PDF文件第3页浏览型号TPSMP22A-E3/85A的Datasheet PDF文件第4页浏览型号TPSMP22A-E3/85A的Datasheet PDF文件第5页 
New Product  
TPSMP6.8 thru TPSMP43A  
Vishay General Semiconductor  
High Power Density Surface Mount Automotive  
Transient Voltage Suppressors  
FEATURES  
• Very low profile - typical height of 1.0 mm  
eSMPTM Series  
• Ideal for automated placement  
• Unidirection only  
• Exclusive patented PAR oxide passivated chip  
construction  
• Excellent clamping capability  
• Low incremental surge resistance  
DO-220AA (SMP)  
• Very fast response time  
• Meets MSL level 1, per J-STD-020C, LF max peak  
of 260 °C  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
MAJOR RATINGS AND CHARACTERISTICS  
TYPICAL APPLICATIONS  
V(BR)  
6.8 V to 43 V  
250 W  
300 W  
400 W  
2.5 W  
Protection for Ics, drive transistors, signal lines of sensor  
units, and electronic units in consumer, computer,  
industrial and automotive applications.  
P
PPM (for V(BR) 6.8 V)  
P
PPM (for V(BR) 7.5 V - 12 V)  
P
PPM (for V(BR) 13 V - 43 V)  
MECHANICAL DATA  
PD  
Case: DO-220AA (SMP)  
IFSM  
40 A  
Epoxy meets UL 94V-0 flammability rating  
Tj max.  
185 °C  
Terminals: Matte tin plated leads, solderable per  
J-STD-002B and JESD22-B102D  
HE3 suffix for high reliability grade (AEC Q101  
qualified)  
Polarity: Color band denotes cathode end  
MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)  
A
PARAMETER  
SYMBOL  
PPPM  
IPPM  
VALUE  
see table next page  
see table next page  
2.5  
UNIT  
W
Peak power dissipation with a 10/1000 µs waveform (1,2) (Fig. 1 & 3)  
Peak power pulse current with a 10/1000 µs waveform (1) (Fig. 1)  
Power dissipation on infinite heatsink, TA = 75 °C  
A
PD  
W
Peak forward surge current 10 ms single half sine-wave superimposed  
on rated load  
IFSM  
40  
A
Maximum instantaneous forward voltage at 25 A (3)  
VF  
2.5  
V
Operating junction and storage temperature range  
TJ, TSTG  
- 65 to + 185  
°C  
Note:  
(1) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25 °C per Fig. 2  
(2) Mounted on P.C.B. with 5.0 x 5.0 mm copper pads attached to each terminal  
(3) Pulse test: 300 µs pulse width, 1 % duty cycle  
www.vishay.com  
1
Document Number: 88471  
Revision: 25-Jun-07  
12345

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 		400W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-220AA, ROHS COMPLIANT, PLASTIC, SMP, 2 PIN
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 		Trans Voltage Suppressor Diode, 17.8V V(RWM), Unidirectional,
TPSMP22-E3 VISHAY

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 		Trans Voltage Suppressor Diode, 400W, 17.8V V(RWM), Unidirectional, 1 Element, Silicon, DO
TPSMP22-E3/84A VISHAY

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 		Trans Voltage Suppressor Diode, 17.8V V(RWM), Unidirectional,

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