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TPSMP22AHM3_A/I PDF预览

TPSMP22AHM3_A/I

更新时间： 2024-01-31 23:34:56
品牌 Logo 应用领域
威世 - VISHAY 局域网测试光电二极管电视
页数 文件大小 规格书
5页 102K
描述
TVS DIODE 18.8V 30.6V DO220AA

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中文翻译

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TPSMP22AHM3_A/I 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：R-PDSO-F2Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.10.00.50
Factory Lead Time：12 weeks风险等级：5.78
其他特性：EXCELLENT CLAMPING CAPABILITY, HIGH RELIABILITY最大击穿电压：23.1 V
最小击穿电压：20.9 V击穿电压标称值：22 V
外壳连接：ANODE最大钳位电压：30.6 V
配置：SINGLE二极管元件材料：SILICON
二极管类型：TRANS VOLTAGE SUPPRESSOR DIODEJEDEC-95代码：DO-220AA
JESD-30 代码：R-PDSO-F2JESD-609代码：e3
湿度敏感等级：1最大非重复峰值反向功率耗散：400 W
元件数量：1端子数量：2
最高工作温度：185 °C最低工作温度：-65 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE极性：UNIDIRECTIONAL
最大功率耗散：2.5 W最大重复峰值反向电压：18.8 V
最大反向电流：1 µA反向测试电压：18.8 V
表面贴装：YES技术：AVALANCHE
端子面层：Matte Tin (Sn)端子形式：FLAT
端子位置：DUALBase Number Matches：1

TPSMP22AHM3_A/I 数据手册

 浏览型号TPSMP22AHM3_A/I的Datasheet PDF文件第2页浏览型号TPSMP22AHM3_A/I的Datasheet PDF文件第3页浏览型号TPSMP22AHM3_A/I的Datasheet PDF文件第4页浏览型号TPSMP22AHM3_A/I的Datasheet PDF文件第5页 
TPSMP6.8A thru TPSMP43A  
www.vishay.com  
Vishay General Semiconductor  
High Power Density Surface Mount PAR®  
Transient Voltage Suppressors  
FEATURES  
eSMP® Series  
• Junction  
passivation  
optimized  
design  
passivated anisotropic rectifier technology  
• TJ = 185 °C capability suitable for high reliability  
and automotive requirement  
• Very low profile - typical height of 1.0 mm  
• Ideal for automated placement  
• Uni-direction only  
SMP (DO-220AA)  
• Excellent clamping capability  
• Low incremental surge resistance  
• Very fast response time  
Anode  
Cathode  
• Meets MSL level 1, per J-STD-020, LF maximum peak  
of 260 °C  
click logo to get started  
DESIGN SUPPORT TOOLS  
• AEC-Q101 qualified  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
Models  
Available  
TYPICAL APPLICATIONS  
PRIMARY CHARACTERISTICS  
Protection for ICs, drive transistors, signal lines of sensor  
units, and electronic units in consumer, computer,  
industrial, and automotive applications.  
VBR  
6.8 V to 43 V  
VWM  
5.8 V to 36.8 V  
250 W  
P
PPM (for VBR 6.8 V)  
MECHANICAL DATA  
PPPM (for VBR 7.5 V to 12 V)  
300 W  
P
PPM (for VBR 13 V to 43 V)  
400 W  
Case: SMP (DO-220AA)  
Molding compound meets UL 94 V-0 flammability rating  
PD  
2.5 W  
Base P/NHM3_X  
AEC-Q101 qualified (“X” denotes revision code e.g. A, B, ...)  
- halogen-free, RoHS-compliant and  
IFSM  
40 A  
TJ max.  
Polarity  
Package  
185 °C  
Terminals: matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
HM3 suffix meets JESD 201 class 2 whisker test  
Uni-directional  
SMP (DO-220AA)  
Polarity: color band denotes cathode end  
MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)  
PARAMETER  
Peak power dissipation with a 10/1000 μs waveform (fig. 1 and 3) (1)(2)  
Peak power pulse current with a 10/1000 μs waveform (fig. 1) (1)  
Power dissipation on infinite heatsink, TA = 75 °C  
SYMBOL  
PPPM  
IPPM  
VALUE  
See table next page  
See table next page  
2.5  
UNIT  
W
A
PD  
W
Peak forward surge current 10 ms single half sine-wave  
superimposed on rated load  
IFSM  
40  
A
Maximum instantaneous forward voltage at 25 A (3)  
VF  
2.5  
V
Operating junction and storage temperature range  
TJ, TSTG  
-65 to +185  
°C  
Notes  
(1)  
(2)  
(3)  
Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2  
Mounted on PCB with 5.0 mm x 5.0 mm copper pads attached to each terminal  
Pulse test: 300 μs pulse width, 1 % duty cycle  
Revision: 10-Aug-2018  
Document Number: 88471  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
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