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TPSMC62C PDF预览

TPSMC62C

更新时间: 2024-02-13 05:29:03
品牌 Logo 应用领域
力特 - LITTELFUSE 二极管
页数 文件大小 规格书
6页 704K
描述
Trans Voltage Suppressor Diode

TPSMC62C 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.77
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJESD-609代码:e3
湿度敏感等级:1峰值回流温度(摄氏度):260
端子面层:MATTE TIN处于峰值回流温度下的最长时间:30
Base Number Matches:1

TPSMC62C 数据手册

 浏览型号TPSMC62C的Datasheet PDF文件第2页浏览型号TPSMC62C的Datasheet PDF文件第3页浏览型号TPSMC62C的Datasheet PDF文件第4页浏览型号TPSMC62C的Datasheet PDF文件第5页浏览型号TPSMC62C的Datasheet PDF文件第6页 
TransientVoltage Suppression Diodes  
Surface Mount – 1500W > TPSMC series  
RoHS  
TPSMC Series  
Description  
Uni-directional  
TheTPSMC series is designed specifically to protect  
sensitive electronic equipment from voltage transients  
induced by lightning and other transient voltage events.  
Bi-directional  
Features  
• Hi reliability application  
and automotive grade  
AEC Q101 qualified  
• For surface mounted  
applications to optimize  
board space  
• 1500W peak pulse power  
capability at 10/1000μs  
waveform, repetition rate  
(duty cycles):0.01%  
• Fast response time:  
typically less than 1.0ps  
from 0V to BV min  
Agency Approvals  
• Low profile package.  
• Excellent clamping  
capability  
• Low incremental surge  
resistance  
Typical IR less than 1µA  
above 13V  
• High temperature  
soldering guaranteed:  
160°C/10 seconds at  
terminals  
• Plastic package has  
underwriters laboratory  
flammability 94V-O  
• Meet MSL level1, per  
J-STD-020, LF maximun  
peak of 260°C  
• Matte tin lead–free plated  
• Halogen free and RoHS  
compliant  
AGENCY  
AGENCY FILE NUMBER  
E230531  
Typical failure mode is  
short from over-specified  
voltage or current  
• Whisker test is conducted  
based on JEDEC  
JESD201A per its table 4a  
and 4c  
• IEC-61000-4-2 ESD  
Maximum Ratings andThermal Characteristics  
(TA=25OC unless otherwise noted)  
Parameter  
Symbol  
PPPM  
Value  
1500  
Unit  
W
15kV(Air), 8kV (Contact)  
Peak Pulse Power Dissipation at  
TA=25ºC by 10/1000µs Waveform  
(Fig.2)(Note 1), (Note 2)  
• ESD protection of data  
lines in accordance with  
IEC 61000-4-2 (IEC801-2)  
• EFT protection of data  
lines in accordance with  
IEC 61000-4-4 (IEC801-4)  
Power Dissipation on Infinite Heat  
Sink atTA=50OC  
PM(AV)  
IFSM  
6.5  
W
A
Peak Forward Surge Current, 8.3ms  
Single Half Sine Wave (Note 3)  
200  
Maximum Instantaneous Forward  
Voltage at 100A for Unidirectional  
Only (Note 4)  
• Built-in strain relief  
VF  
3.5/5.0  
V
VBR @TJ= VBR@25°C x (1+αT  
x (TJ - 25))  
Operating Junction and Storage  
Temperature Range  
TJ, TSTG -65 to 150  
°C  
(αT:Temperature Coefficient)  
• Glass passivated chip  
junction  
TypicalThermal Resistance Junction  
to Lead  
RuJL  
RuJA  
15  
75  
°C/W  
°C/W  
TypicalThermal Resistance Junction  
to Ambient  
Applications  
Notes:  
1. Non-repetitive current pulse , per Fig. 4 and derated aboveTA = 25OC per Fig. 3.  
TVS devices are ideal for the protection of I/O Interfaces,  
CC bus and other vulnerable circuits used inTelecom,  
Computer, Industrial and Consumer electronic applications.  
2. Mounted on copper pad area of 0.31x0.31” (8.0 x 8.0mm) to each terminal.  
V
3. Measured on 8.3ms single half sine wave or equivalent square wave for unidirectional  
device only, duty cycle=4 per minute maximum.  
4. VF<3.5V for VBR <_ 200V and VF<5.0V for VBR >_ 201V.  
Functional Diagram  
Bi-directional  
Cathode  
Anode  
Uni-directional  
1
© 2015 Littelfuse, Inc.  
Specifications are subject to change without notice.  
Revised: 09/17/15  

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