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TPSMB24A-E3 PDF预览

TPSMB24A-E3

更新时间： 2024-02-19 15:43:29
品牌 Logo 应用领域
威世 - VISHAY 局域网光电二极管
页数 文件大小 规格书
3页 29K
描述
Trans Voltage Suppressor Diode, 600W, Unidirectional, 1 Element, Silicon, DO-214AA, PLASTIC, SMB, 2 PIN

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中文翻译

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TPSMB24A-E3 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Obsolete零件包装代码：DO-214AA
包装说明：R-PDSO-C2针数：2
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.10.00.50风险等级：5.71
其他特性：PATENTED DEVICE最大击穿电压：25.2 V
最小击穿电压：22.8 V配置：SINGLE
二极管元件材料：SILICON二极管类型：TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码：DO-214AAJESD-30 代码：R-PDSO-C2
JESD-609代码：e3湿度敏感等级：1
最大非重复峰值反向功率耗散：600 W元件数量：1
端子数量：2封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260极性：UNIDIRECTIONAL
认证状态：Not Qualified表面贴装：YES
技术：AVALANCHE端子面层：MATTE TIN
端子形式：C BEND端子位置：DUAL
处于峰值回流温度下的最长时间：40Base Number Matches：1

TPSMB24A-E3 数据手册

 浏览型号TPSMB24A-E3的Datasheet PDF文件第2页浏览型号TPSMB24A-E3的Datasheet PDF文件第3页 
TPSMB6.8 thru TPSMB43A  
Vishay Semiconductors  
formerly General Semiconductor  
Surface Mount Automotive  
Transient Voltage Suppressors  
DO-214AA (SMB)  
Breakdown Voltage 6.8 to 43V  
Peak Pulse Power 600W  
Cathode Band  
Mounting Pad Layout  
0.086 (2.20)  
0.077 (1.95)  
0.155 (3.94)  
0.130 (3.30)  
0.106 MAX  
(2.69 MAX)  
Dimensions in inches  
and (millimeters)  
0.083 MIN  
(2.10 MIN)  
Available in  
uni-directional  
only  
0.180 (4.57)  
0.160 (4.06)  
0.050 MIN  
(1.27 MIN)  
0.012 (0.305)  
0.006 (0.152)  
0.220 REF  
0.096 (2.44)  
0.084 (2.13)  
*Patent #’s  
4,980,315  
5,166,769  
5,278,094  
Features  
0.060 (1.52)  
0.030 (0.76)  
0.008  
• Plastic package has Underwriters Laboratory  
Flammability Classification 94V-0  
• Easy pick and place  
(0.203)  
Max.  
0.220 (5.59)  
0.205 (5.21)  
• Low profile package  
Mechanical Data  
Case: JEDEC DO-214AA molded plastic body over  
• Built-in strain relief ideal for automated placement  
• Exclusive patented PAR® oxide passivated  
chip construction  
• 600W peak pulse power capability with a 10/1000ms  
waveform, repetition rate (duty cycle): 0.01%  
• Excellent clamping capability  
passivated junction  
Terminals: Solder plated, solderable per  
MIL-STD-750, Method 2026  
Polarity: The color band denotes the cathode,  
which is positive with respect to the anode under  
normal TVS operation  
• Low incremental surge resistance  
• Very fast response time  
• For devices with V  
≥ 10V I is typically less  
D
(BR)  
Mounting Position: Any  
Weight: 0.003 oz., 0.093 g  
than 2.0mA at T = 150°C  
A
• Designed for under the hood surface mount  
applications  
Packaging codes/options:  
5/3.2K per 13" Reel (12mm tape), 38.4K/box  
2/750 EA per 7" Reel (12mm tape), 15K/box  
• High temperature soldering:  
250°C/10 seconds at terminals  
Maximum Ratings and Thermal Characteristics(TA = 25°C unless otherwise noted)  
Parameter  
Symbol  
Value  
Unit  
Peak pulse power dissipation with a 10/1000µs  
PPPM  
Minimum 600  
W
waveform(1)(2) (Fig. 1)  
Peak pulse current with a 10/1000µs waveform(1) (Fig. 3)  
Peak forward surge current 8.3ms single half sine-wave(2)(3)  
Instantaneous forward voltage at 50A(3)  
IPPM  
IFSM  
See Next Table  
A
A
75  
3.5  
VF  
V
Operating junction and storage temperature range  
TJ, TSTG  
–65 to +185  
°C  
Notes: (1) Non-repetitive current pulse, per Fig.3 and derated above TA = 25°C per Fig. 2  
(2) Mounted on 0.2 x 0.2” (5.0 x 5.0mm) land areas per figure  
(3) Mounted on 8.3ms single half sine-wave duty cycle = 4 pulses per minute maximum  
Document Number 88406  
06-May-02  
www.vishay.com  
1
123

中文翻译

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与TPSMB24A-E3相关器件

型号 品牌 获取价格 描述 数据表
TPSMB24A-HE3/2 VISHAY

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 		DIODE 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, PLASTIC, SMB, 2 PIN, Transient
TPSMB24A-HE3/5 VISHAY

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TPSMB24AHE3/52T VISHAY

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 		DIODE 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2
TPSMB24AHE3/5BT VISHAY

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 		DIODE 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2
TPSMB24A-HE3/5BT VISHAY

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 		DIODE 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2
TPSMB24AHE3_A/H VISHAY

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 		Trans Voltage Suppressor Diode, 600W, 20.5V V(RWM), Unidirectional, 1 Element, Silicon, DO
TPSMB24A-VR LITTELFUSE

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 		TPSMB-VR系列专门用于保护敏感电子设备，使其免受雷击和其他瞬态电压事件引起的瞬态电压
TPSMB24CA LITTELFUSE

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 		Trans Voltage Suppressor Diode, 600W, 20.5V V(RWM), Bidirectional, 1 Element, Silicon, DO-
TPSMB24CA LGE

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 		暂无描述
TPSMB24CA-VR LITTELFUSE

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 		Trans Voltage Suppressor Diode, 600W, 24V V(RWM), Bidirectional, 1 Element, Silicon, DO-21

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