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TPS65510RGTTG4 PDF预览

TPS65510RGTTG4

更新时间: 2024-01-28 05:49:24
品牌 Logo 应用领域
德州仪器 - TI /
页数 文件大小 规格书
20页 843K
描述
1-CHANNEL POWER SUPPLY SUPPORT CKT, PQCC16, 3 X 3 MM, GREEN, PLASTIC, QFN-16

TPS65510RGTTG4 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:QFN
包装说明:HVQCCN, LCC16,.12SQ,20针数:16
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.39.00.01风险等级:5.18
可调阈值:NO模拟集成电路 - 其他类型:POWER SUPPLY SUPPORT CIRCUIT
JESD-30 代码:S-PQCC-N16JESD-609代码:e4
长度:3 mm湿度敏感等级:2
信道数量:1功能数量:1
端子数量:16最高工作温度:85 °C
最低工作温度:-35 °C封装主体材料:PLASTIC/EPOXY
封装代码:HVQCCN封装等效代码:LCC16,.12SQ,20
封装形状:SQUARE封装形式:CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE
峰值回流温度(摄氏度):260电源:3/5 V
认证状态:Not Qualified座面最大高度:1 mm
子类别:Power Management Circuits最大供电电流 (Isup):0.35 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):2.65 V
标称供电电压 (Vsup):3.6 V表面贴装:YES
温度等级:OTHER端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式:NO LEAD端子节距:0.5 mm
端子位置:QUAD处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:3 mmBase Number Matches:1

TPS65510RGTTG4 数据手册

 浏览型号TPS65510RGTTG4的Datasheet PDF文件第2页浏览型号TPS65510RGTTG4的Datasheet PDF文件第3页浏览型号TPS65510RGTTG4的Datasheet PDF文件第4页浏览型号TPS65510RGTTG4的Datasheet PDF文件第5页浏览型号TPS65510RGTTG4的Datasheet PDF文件第6页浏览型号TPS65510RGTTG4的Datasheet PDF文件第7页 
TPS65510  
www.ti.com .......................................................................................................................................................................................... SLLS917SEPTEMBER 2008  
LOW-POWER BATTERY BACKUP IC  
WITH INTEGRATED BOOST CONVERTER  
1
FEATURES  
DESCRIPTION  
2
Power-Path Switch to Select Main Battery or  
Backup Battery for Real-Time Clock (RTC)  
The TPS65510 offers a suitable solution for power  
switch to select the main battery or the backup  
battery.  
Integrated Boost DC/DC Converter  
Modulation Select by Control Pin (PWMON),  
Pulse Frequency Modulation (PFM) or  
Pulse Width Modulation (PWM)  
This device automatically selects the power path. It  
depends on the voltage level of the VO_BT pin.  
When the main battery is removed, the power path of  
the VOUT pin is automatically changed from the  
output of 3.3-V low droppout (LDO) voltage regulator  
to the backup battery.  
Fixed Switching Frequency (PWM, 750 kHz)  
Peak Current Mode Control (PWM)  
Low Power Consumption (PFM)  
Four Integrated Low Dropout (LDO) Voltage  
Regulators for 1.2 V/1.8 V/3.3 V  
The backup battery is charged from the power path of  
the VRO pin (output of 3.3-V LDO) via an external  
diode and resistor. The input of the LDO voltage  
regulator comes from the internal boost converter.  
Two Integrated Indicators  
CS: Monitors the Voltage Level of Main  
Battery (VBAT) and Output voltage level of  
Boost Converter (VO_BT)  
The 1.2-V output LDO and 1.8-V output LDO voltage  
regulators have a enable pin, V_CTRL. If these  
outputs are not necessary, V_CTRL should be  
connected to AGND to save power consumption. The  
self-power consumption is less than 3 µA (maximum)  
using the backup battery.  
XRESET: Monitors the Output voltage Level  
of 3.3V LDO (VOUT)  
16-Pin QFN (3mm × 3mm) Package  
Operating Temperature –35°C to 85°C  
Protection  
This device has two indicators. One is CS, which  
monitors the voltage level of the VBAT pin and  
VO_BT pin. The other is XRESET, which monitors  
voltage level of the VOUT pin. These indicators  
should be connected to CPU/DSP to reset them.  
Overcurrent Protection (OCP)  
Overvoltage Protection (OVP)  
Thermal Shutdown (TSD)  
This device reduces the total solution area and  
extends the lifetime of the backup battery.  
Undervoltage Lockout (UVLO)  
APPLICATIONS  
Digital Still Cameras  
Portable Systems With Backup Battery  
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas  
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
2
PowerPAD is a trademark of Texas Instruments.  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  
Copyright © 2008, Texas Instruments Incorporated  

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