TPS622(F)
TOSHIBA Phototransistor Silicon NPN Epitaxial Planar
TPS622(F)
Lead(Pb)-Free
Opto-electronic Switch
Optical Mouse
Unit in : mm
Optical Touch Switch
•
•
•
•
•
Compact side view epoxy resin package
High response speed: t , t = 6μs (typ.)
r
f
Half value angle: θ1/2 = ±15° (typ.)
Visible light cut type (black package)
Optimum in combination with infrared LED TLN117(F) with
identical external dimensions.
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector−emitter voltage
Emitter−collector voltage
Collector current
V
V
30
5
V
V
CEO
ECO
I
50
75
mA
mW
C
Collector power dissipation
P
C
TOSHIBA
0 – 3G1
Collector power dissipation derating
(Ta > 25°C)
ΔP / °C
−1
mW / °C
C
Weight: 0.1 g (typ.)
Operating temperature range
Storage temperature range
Soldering temperature (5s)
T
−25~85
°C
°C
°C
opr
T
−40~100
stg
sol
T
260 (Note 1)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Soldering portion of lead: At least 2mm from the body of the device.
Opto-electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
I (I
Test Condition
Min.
⎯
Typ.
0.005
70
Max.
0.1
⎯
Unit
μA
Dark current
Light current
)
V
= 24V, E = 0
D
CEO
CE
E = 0.1mW / cm2,
I
27
μA
L
V
= 3V
(Note 2,3)
CE
Collector−emitter saturation
voltage
E = 0.1mW / cm2,
I = 15μA
L
V
⎯
0.15
0.4
V
CE(sat)
Peak sensitivity wavelength
Half value angle
λ
⎯
⎯
⎯
⎯
870
±15
⎯
⎯
nm
°
P
1
2
θ
Rise time
Fall time
t
⎯
⎯
6
6
⎯
⎯
r
V
= 5V, I = 2mA
C
CC
L
Switching time
μs
R = 100Ω
t
f
1
2007-10-01