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TP7S8 PDF预览

TP7S8

更新时间: 2024-02-07 18:01:54
品牌 Logo 应用领域
其他 - ETC 晶体晶体管开关局域网
页数 文件大小 规格书
8页 303K
描述
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 7A I(C) | TO-220VAR

TP7S8 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:ITO-220, 3 PIN
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.92
Is Samacsys:N其他特性:HIGH RELIABILITY
外壳连接:ISOLATED最大集电极电流 (IC):7 A
集电极-发射极最大电压:80 V配置:SINGLE
最小直流电流增益 (hFE):70JESD-30 代码:R-PSFM-T3
JESD-609代码:e0湿度敏感等级:2
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):240极性/信道类型:NPN
功耗环境最大值:25 W最大功率耗散 (Abs):25 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):50 MHz
最大关闭时间(toff):1700 ns最大开启时间(吨):300 ns
VCEsat-Max:0.3 VBase Number Matches:1

TP7S8 数据手册

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SHINDENGEN  
Switching Power Transistor  
HSV Series  
OUTLINE DIMENSIONS  
Case : ITO-220  
2SC4981  
(TP7S8)  
Unit : mm  
7A NPN  
RATINGS  
œAbsolute Maximum Ratings  
Item  
Storage Temperature  
Symbol  
Conditions  
Ratings  
-55`150  
Unit  
Tstg  
Tj  
VCBO  
VCEO  
VEBO  
IC  
Ž
Ž
V
V
V
Junction Temperature  
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Current DC  
150  
100  
80  
7
7
A
Collector Current Peak  
Base Current DC  
ICP  
IB  
14  
1.5  
2
A
A
A
Base Current Peak  
IBP  
Total Transistor Dissipation  
Dielectric Strength  
PT  
Tc = 25Ž  
25  
2
0.5  
W
kV  
Terminal to case, AC 1 minute  
(Recommended torque : 0.3N¥mj  
Vdis  
TOR  
Mounting Torque  
N¥m  
œElectrical Characteristics (Tc=25Ž)  
Item  
Conditions  
IC = 0.1A  
Symbol  
VCEO(sus)  
ICBO  
Ratings  
Min 80  
Unit  
V
Collector to Emitter Sustaining Voltage  
Collector Cutoff Current  
At rated Voltage  
Max 0.1  
Max 0.1  
Max 0.1  
Min 70  
mA  
ICEO  
Emitter Cutoff Current  
DC Current Gain  
At rated Voltage  
VCE = 2V, IC = 3.5A  
IC = 3.5A  
IEBO  
mA  
hFE  
Collector to Emitter Saturation Voltage  
Base to Emitter Saturation Voltage  
Thermal Resistance  
VCE(sat)  
VBE(sat)  
Æjc  
Max 0.3  
Max 1.2  
Max 5  
V
V
IB = 0.2A  
Junction to case  
VCE = 10V, IC = 0.7A  
Ž/W  
MHz  
Transition Frequency  
fT  
ton  
TYP 50  
Max 0.3  
Turn on Time  
IC = 3.5A  
Storage Time  
Fall Time  
IB1 = 0.35A, IB2 = 0.35A  
RL = 8, VBB2 = 4V  
ts  
tf  
Max 1.5  
Max 0.2  
Ês  

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