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TMP119AIYBGR PDF预览

TMP119AIYBGR

更新时间: 2024-03-18 21:39:51
品牌 Logo 应用领域
德州仪器 - TI 温度传感传感器温度传感器
页数 文件大小 规格书
6页 221K
描述
采用 WCSP 封装且具有增强型应变容差的 ±0.08°C 精确数字温度传感器 | YBG | 6 | -55 to 150

TMP119AIYBGR 数据手册

 浏览型号TMP119AIYBGR的Datasheet PDF文件第1页浏览型号TMP119AIYBGR的Datasheet PDF文件第3页浏览型号TMP119AIYBGR的Datasheet PDF文件第4页浏览型号TMP119AIYBGR的Datasheet PDF文件第5页浏览型号TMP119AIYBGR的Datasheet PDF文件第6页 
TPD4F003, TPD6F003, TPD8F003  
SLLS907D AUGUST 2008REVISED JANUARY 2010  
www.ti.com  
The TPDxF003 are highly integrated device designed to suppress EMI/RFI noise in all systems subjected to  
electromagnetic interferences. These filter series include an ESD protection circuitry which prevents damage to  
the application when subjected to ESD stress far exceeding IEC 61000-4-2 (Level 4).  
The TPDxF003 is specified for –40°C to 85°C operation.  
ORDERING INFORMATION  
ORDERABLE  
PART NUMBER  
TA  
PACKAGE(1) (2)  
PACKAGE DIMENSION  
TOP-SIDE MARKING  
Length = 1.7 mm, Width = 1.35 mm,  
Pitch = 0.4 mm, Height = 0.75 mm  
TPD4F003DQDR  
5RS  
47S  
5US  
Length = 2.5 mm, Width = 1.35 mm,  
Pitch = 0.4 mm, Height = 0.75 mm  
–40°C to 85°C  
0.4-mm pitch SON  
TPD6F003DQDR  
TPD8F003DQDR  
Length = 3.3 mm, Width = 1.35 mm,  
Pitch = 0.4 mm, Height = 0.75 mm  
(1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI  
web site at www.ti.com.  
(2) Package drawings, thermal data, and symbolization are available at www.ti.com/packaging.  
EQUIVALENT SCHEMATIC REPRESENTATION  
100 Ω  
Ch_Out  
Ch_In  
8.5 pF  
8.5 pF  
GND  
ABSOLUTE MAXIMUM RATINGS(1)  
over operating free-air temperature range (unless otherwise noted)  
MIN  
MAX UNIT  
VIO  
Tstg  
TJ  
IO to GND  
6
150  
150  
V
Storage temperature range  
Junction temperature  
–65  
°C  
°C  
(1) Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings  
only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the  
specifications is not implied. Exposure to absolute maximum rated conditions for extended periods may affect device reliability.  
ELECTRICAL CHARACTERISTICS  
TA = –40°C to 85°C (unless otherwise noted)  
PARAMETER  
DC breakdown voltage  
Resistance  
TEST CONDITIONS  
MIN  
6
TYP(1)  
MAX UNIT  
VBR  
R
IIO = 10 mA  
V
85  
100  
8.5  
10  
115  
pF  
C
Capacitance (C1 or C2)  
Channel leakage current  
Cut-off frequency  
VIO = 2.5 V  
VIO = 3.3 V  
IIO  
fC  
nA  
ZSOURCE = 50 , ZLOAD = 50 Ω  
200  
MHz  
(1) Typical values are at TA = 25°C.  
2
Submit Documentation Feedback  
Copyright © 2008–2010, Texas Instruments Incorporated  
Product Folder Link(s): TPD4F003 TPD6F003 TPD8F003  

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