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TM90DZ-24 PDF预览

TM90DZ-24

更新时间: 2024-02-08 05:44:29
品牌 Logo 应用领域
三菱 - MITSUBISHI 栅极触发装置可控硅整流器高压局域网高压大电源高功率电源
页数 文件大小 规格书
5页 66K
描述
HIGH VOLTAGE HIGH POWER GENERAL USE INSULATED TYPE

TM90DZ-24 技术参数

是否无铅:含铅是否Rohs认证:不符合
生命周期:Not Recommended包装说明:FLANGE MOUNT, R-PUFM-X7
Reach Compliance Code:unknownHTS代码:8541.30.00.80
风险等级:5.77Is Samacsys:N
外壳连接:ISOLATED配置:SERIES CONNECTED, CENTER TAPPED
最大直流栅极触发电流:100 mA最大直流栅极触发电压:2 V
快速连接描述:2G-2GR螺丝端子的描述:A-K-AK
JESD-30 代码:R-PUFM-X7最大漏电流:15 mA
通态非重复峰值电流:1800 A元件数量:2
端子数量:7最大通态电流:90000 A
最高工作温度:125 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大均方根通态电流:141.3 A
断态重复峰值电压:1200 V重复峰值反向电压:1200 V
子类别:Silicon Controlled Rectifiers表面贴装:NO
端子形式:UNSPECIFIED端子位置:UPPER
处于峰值回流温度下的最长时间:NOT SPECIFIED触发设备类型:SCR
Base Number Matches:1

TM90DZ-24 数据手册

 浏览型号TM90DZ-24的Datasheet PDF文件第1页浏览型号TM90DZ-24的Datasheet PDF文件第3页浏览型号TM90DZ-24的Datasheet PDF文件第4页浏览型号TM90DZ-24的Datasheet PDF文件第5页 
MITSUBISHI THYRISTOR MODULES  
TM90DZ/CZ-24,-2H  
HIGH VOLTAGE HIGH POWER GENERAL USE  
INSULATED TYPE  
ABSOLUTE MAXIMUM RATINGS  
Voltage class  
Symbol  
Parameter  
Unit  
24  
2H  
VRRM  
Repetitive peak reverse voltage  
Non-repetitive peak reverse voltage  
DC reverse voltage  
1200  
1350  
960  
1600  
1700  
1280  
1600  
1700  
1280  
V
V
V
V
V
V
VRSM  
VR (DC)  
VDRM  
VDSM  
VD (DC)  
Repetitive peak off-state voltage  
Non-repetitive peak off-state voltage  
DC off-state voltage  
1200  
1350  
960  
Symbol  
Parameter  
RMS on-state current  
Average on-state current  
Conditions  
Ratings  
140  
Unit  
A
IT (RMS)  
IT (AV)  
ITSM  
Single-phase, half-wave 180° conduction, TC=82°C  
90  
A
Surge (non-repetitive) on-state current One half cycle at 60Hz, peak value  
2
1800  
A
2
4
2
I t  
I t for fusing  
Value for one cycle of surge current  
1.4 × 10  
100  
A s  
di/dt  
PGM  
PG (AV)  
VFGM  
VRGM  
IFGM  
Tj  
Critical rate of rise of on-state current VD=1/2VDRM, IG=1.0A, Tj=125°C  
Peak gate power dissipation  
A/µs  
W
5.0  
Average gate power dissipation  
Peak gate forward voltage  
0.5  
W
10  
V
Peak gate reverse voltage  
5.0  
V
Peak gate forward current  
2.0  
A
Junction temperature  
–40~+125  
–40~+125  
2500  
°C  
Tstg  
Storage temperature  
°C  
Viso  
Isolation voltage  
Mounting torque  
Weight  
Charged part to case  
V
1.47~1.96  
15~20  
1.96~2.94  
20~30  
160  
N·m  
kg·cm  
N·m  
kg·cm  
g
Main terminal screw M5  
Mounting screw M6  
Typical value  
ELECTRICAL CHARACTERISTICS  
Limits  
Typ.  
Symbol  
Parameter  
Test conditions  
Unit  
Min.  
Max.  
15  
IRRM  
Repetitive peak reverse current  
Repetitive peak off-state current  
On-state voltage  
Tj=125°C, VRRM applied  
Tj=125°C, VDRM applied  
mA  
mA  
V
15  
IDRM  
VTM  
1.4  
Tj=125°C, ITM=270A, instantaneous meas.  
500  
dv/dt  
VGT  
Critical rate of rise of off-state voltage Tj=125°C, VD=2/3VDRM  
V/µs  
V
2.0  
Gate trigger voltage  
Tj=25°C, VD=6V, RL=2Ω  
0.25  
15  
VGD  
Gate non-trigger voltage  
Gate trigger current  
Tj=125°C, VD=1/2VDRM  
V
100  
0.3  
0.2  
IGT  
Tj=25°C, VD=6V, RL=2Ω  
mA  
°C/W  
°C/W  
Rth (j-c)  
Rth (c-f)  
Thermal resistance  
Junction to case (per 1/2 module)  
Case to fin, conductive grease applied (per 1/2 module)  
Contact thermal resistance  
Measured with a 500V megohmmeter between main terminal  
and case  
10  
Insulation resistance  
MΩ  
Feb.1999  

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