TLP722

更新时间： 2024-01-08 21:59:23

品牌	Logo	应用领域
东芝 - TOSHIBA		光电光电器件二极管光电二极管
页数	文件大小	规格书
3页	129K
描述
Photocoupler Photo−Diode

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中文翻译

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技术参数
数据手册

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TLP722 技术参数

生命周期：	Active	包装说明：	PLASTIC, DIP-4
Reach Compliance Code：	unknown	HTS代码：	8541.40.80.00
风险等级：	5.57	配置：	SINGLE
功能数量：	1	最高工作温度：	100 °C
最低工作温度：	-55 °C	光电设备类型：	OPTOELECTRONIC DEVICE
Base Number Matches：	1

TLP722 数据手册

TLP722

TOSHIBA Photocoupler Photo−Diode

TENTATIVE

TLP722

Unit in mm

The TOSHIBA TLP722 consists of a photo−diode optically coupled to a

gallium arsenide infrared emitting diode in a four lead plastic DIP

(DIP4).

TLP722: Single circuit

Cathode−anode voltage: 30V (max)

Current transfer ratio: 0.1% (min)

Input / output isolation voltage: 4000V

Operating temperature range: −55~100°C

Storage temperature range: −55~125°C

UL recognized: UL1577, E67349

VDE approved: VDE0884

(min)

rms

Maximum operating insulation voltage: 890V

Maximum permissible over voltage: 8000V

(Note): When a VDE0884 approved type is needed,

please designate the “ Option (D4) ”

TOSHIBA

11−5B2

Weight: 0.28 g

SEMKO approved product: SS EN60950,

approved No. 9808324 / 01

Construction mechanical rating

Pin Configuration

(top view)

TLP722 type

7.0 mm

TLP722F type

8.0 mm

Creepage distance

Clearance

Insulation thickness

0.4 mm

2002-09-25

12 3

中文翻译

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