TLMF310.
Vishay Semiconductors
1)
ABSOLUTE MAXIMUM RATINGS
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
V
VR
Reverse voltage
5
Tamb ≤ 60 °C
tp ≤ 10 μs
IF
IFSM
PV
DC Forward current
Surge forward current
Power dissipation
30
0.1
mA
A
Tamb ≤ 60 °C
80
mW
°C
Tj
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
100
Tamb
Tstg
Tsd
- 40 to + 100
- 55 to + 100
260
°C
°C
t ≤ 5 s
°C
Thermal resistance junction/
ambient
mounted on PC board
(pad size > 16 mm2)
RthJA
400
K/W
Note:
1)
T
= 25 °C, unless otherwise specified
amb
1)
OPTICAL AND ELECTRICAL CHARACTERISTICS TLMF310., SOFT ORANGE
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN
TYP.
MAX
UNIT
TLMF3100
IV
25
50
mcd
IF = 10 mA
Luminous intensity
TLMF3101
IV
λd
λp
ϕ
40
125
611
mcd
nm
nm
deg
V
IF = 10 mA
IF = 10 mA
IF = 10 mA
IF = 20 mA
IR = 10 μA
598
605
610
60
Dominant wavelength
Peak wavelength
Angle of half intensity
Forward voltage
VF
VR
Cj
2
2.6
5
V
Reverse voltage
V
R = 0, f = 1 MHz
15
pF
Junction capacitance
Note:
1)
T
= 25 °C, unless otherwise specified
amb
in one packing unit IVmax/IVmin ≤ 1.6
TYPICAL CHARACTERISTICS
T
= 25 °C, unless otherwise specified
amb
40
35
30
25
20
15
10
5
100
80
60
40
20
0
0
0
10 20 30 40 50 60 70 80 90 100
Tamb - Ambient Temperature (°C)
0
20
40
60
80
100
16615
16614
T
– Ambient Temperature (°C)
amb
Figure 1. Power Dissipation vs. Ambient Temperature
Figure 2. Forward Current vs. Ambient Temperature for InGaN
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2
Document Number 83152
Rev. 1.8, 24-Sep-07