TK72E12N1
6. Electrical Characteristics
6.1. Static Characteristics (Ta = 25 unless otherwise specified)
Characteristics
Gate leakage current
Symbol
Test Condition
Min
Typ.
Max
Unit
IGSS
IDSS
VGS = ±20 V, VDS = 0 V
±0.1
µA
Drain cut-off current
VDS = 120 V, VGS = 0 V
10
Drain-source breakdown voltage
Drain-source breakdown voltage (Note 5)
Gate threshold voltage
V(BR)DSS ID = 10 mA, VGS = 0 V
V(BR)DSX ID = 10 mA, VGS = -20 V
120
90
V
Vth
VDS = 10 V, ID = 1.0 mA
VGS = 10 V, ID = 36 A
2.0
4.0
Drain-source on-resistance
RDS(ON)
3.6
4.4
mΩ
Note 5: If a reverse bias is applied between gate and source, this device enters V(BR)DSX mode. Note that the drain-
source breakdown voltage is lowered in this mode.
6.2. Dynamic Characteristics (Ta = 25 unless otherwise specified)
Characteristics
Input capacitance
Symbol
Test Condition
Min
Typ.
Max
Unit
pF
Ciss
Crss
Coss
rg
VDS = 60 V, VGS = 0 V, f = 1 MHz
8100
30
Reverse transfer capacitance
Output capacitance
1200
2.4
33
Gate resistance
Ω
Switching time (rise time)
Switching time (turn-on time)
Switching time (fall time)
Switching time (turn-off time)
tr
See Figure 6.2.1
ns
ton
tf
64
37
toff
120
Fig. 6.2.1 Switching Time Test Circuit
6.3. Gate Charge Characteristics (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Qg
Test Condition
Min
Typ.
130
Max
Unit
nC
Total gate charge (gate-source plus
gate-drain)
VDD ≈ 96 V, VGS = 10 V, ID = 72 A
Gate-source charge 1
Gate-drain charge
Gate switch charge
Qgs1
Qgd
44
34
52
QSW
2012-08-09
Rev.1.0
3