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TK72E12N1 PDF预览

TK72E12N1

更新时间: 2022-04-06 08:16:07
品牌 Logo 应用领域
东芝 - TOSHIBA 稳压器开关
页数 文件大小 规格书
9页 253K
描述
Switching Voltage Regulators

TK72E12N1 数据手册

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TK72E12N1  
6. Electrical Characteristics  
6.1. Static Characteristics (Ta = 25unless otherwise specified)  
Characteristics  
Gate leakage current  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
IGSS  
IDSS  
VGS = ±20 V, VDS = 0 V  
±0.1  
µA  
Drain cut-off current  
VDS = 120 V, VGS = 0 V  
10  
Drain-source breakdown voltage  
Drain-source breakdown voltage (Note 5)  
Gate threshold voltage  
V(BR)DSS ID = 10 mA, VGS = 0 V  
V(BR)DSX ID = 10 mA, VGS = -20 V  
120  
90  
V
Vth  
VDS = 10 V, ID = 1.0 mA  
VGS = 10 V, ID = 36 A  
2.0  
4.0  
Drain-source on-resistance  
RDS(ON)  
3.6  
4.4  
mΩ  
Note 5: If a reverse bias is applied between gate and source, this device enters V(BR)DSX mode. Note that the drain-  
source breakdown voltage is lowered in this mode.  
6.2. Dynamic Characteristics (Ta = 25unless otherwise specified)  
Characteristics  
Input capacitance  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
pF  
Ciss  
Crss  
Coss  
rg  
VDS = 60 V, VGS = 0 V, f = 1 MHz  
8100  
30  
Reverse transfer capacitance  
Output capacitance  
1200  
2.4  
33  
Gate resistance  
Switching time (rise time)  
Switching time (turn-on time)  
Switching time (fall time)  
Switching time (turn-off time)  
tr  
See Figure 6.2.1  
ns  
ton  
tf  
64  
37  
toff  
120  
Fig. 6.2.1 Switching Time Test Circuit  
6.3. Gate Charge Characteristics (Ta = 25unless otherwise specified)  
Characteristics  
Symbol  
Qg  
Test Condition  
Min  
Typ.  
130  
Max  
Unit  
nC  
Total gate charge (gate-source plus  
gate-drain)  
VDD 96 V, VGS = 10 V, ID = 72 A  
Gate-source charge 1  
Gate-drain charge  
Gate switch charge  
Qgs1  
Qgd  
44  
34  
52  
QSW  
2012-08-09  
Rev.1.0  
3

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