Datasheet > TK72E12N1

TK72E12N1

更新时间： 2022-04-06 08:16:07

品牌	Logo	应用领域
东芝 - TOSHIBA		稳压器开关
页数	文件大小	规格书
9页	253K
描述
Switching Voltage Regulators

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TK72E12N1 数据手册

TK72E12N1

4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)

Characteristics

Symbol

Rating

Unit

Drain-source voltage

Gate-source voltage

Drain current (DC)

Drain current (pulsed)

Power dissipation

VDSS

VGSS

120

±20

(Silicon limit)

(Note 1), (Note 2)

(Note 1), (Note 3)

(Note 1)

179

(t = 1 ms)

IDP

360

(Tc = 25)

255

Single-pulse avalanche energy

Avalanche current

(Note 4)

EAS

IAR

256

Channel temperature

Storage temperature

Tch

Tstg

150



-55 to 150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

5. Thermal Characteristics

Characteristics

Symbol

Max

Unit

Channel-to-case thermal resistance

Channel-to-ambient thermal resistance

Rth(ch-c)

Rth(ch-a)

0.49

83.3

/W

Note 1: Ensure that the channel temperature does not exceed 150.

Note 2: Limited by silicon chip capability. Package limit is 100 A.

Note 3: Device mounted with heatsink so that Rth(ch-a) becomes 2.77/W.

Note 4: VDD = 80 V, Tch = 25 (initial), L = 48.3 µH, IAR = 72 A

Note: This transistor is sensitive to electrostatic discharge and should be handled with care.

2012-08-09

Rev.1.0

123 4 5 6 7...9

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