Datasheet > TISP4C115H3BJ

TISP4C115H3BJ

更新时间： 2024-01-25 18:41:35

品牌	Logo	应用领域
伯恩斯 - BOURNS		/
页数	文件大小	规格书
4页	211K
描述
LOW CAPACITANCE BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS

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TISP4C115H3BJ 数据手册

TISP4C115H3BJ THRU TISP4C350H3BJ

LOW CAPACITANCE

BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS

TISP4CxxxH3BJ Overvoltage Protector Series

Ion-Implanted Breakdown Region

- Precise and Stable Voltage

SMB Package (Top View)

- Low Voltage Overshoot under Surge

- Low Off-State Capacitance

2 T

V_DRM

V_(BO)

Device Name

TISP4C115H3BJ †

TISP4C125H3BJ †

TISP4C145H3BJ †

TISP4C165H3BJ

TISP4C180H3BJ †

TISP4C220H3BJ †

TISP4C250H3BJ †

100

120

135

145

180

190

115

125

145

165

180

220

250

MD-SMB-004-a

Device Symbol

TISP4C290H3BJ †

TISP4C350H3BJ †

220

275

290

350

SD-TISP4xxx-001-a

Rated for International Surge Wave Shapes

I_PPSM

Wave Shape

Standard

...................................................... UL Recognized Component

2/10

GR-1089-CORE

TIA-968-A

500

200

150

100

10/160

10/700

10/560

10/1000

ITU-T K.20/21/45

TIA-968-A

GR-1089-CORE

Description

This device is designed to limit overvoltages on the telephone line. Overvoltages are normally caused by a.c. power system or lightning ﬂash

disturbances which are induced or conducted on to the telephone line. A single device provides 2-point protection and is typically used for

the protection of 2-wire telecommunication equipment (e.g. between the Ring and Tip wires for telephones and modems). Combinations of

devices can be used for multi-point protection (e.g. 3-point protection between Ring, Tip and Ground).

The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially clipped by breakdown clamping un-

til the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This low-voltage on state causes

the current resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current helps prevent d.c. latchup

as the diverted current subsides.

Please contact your Bourns representative if the protection voltage you require is not listed.

How to Order

Marking

Code

TISP4CxxxH3BJR-S 4CxxxH

Device

Package

Carrier

Std. Qty.

Order As

TISP4CxxxH3BJ

SMB

Embossed Tape Reeled

3000

Insert xxx corresponding to device name.

SEPTEMBER 2004 – REVISED JANUARY 2010

*RoHS Directive 2002/95/EC Jan 27 2003 including Annex.

Speciﬁcations are subject to change without notice.

Customers should verify actual device performance in their speciﬁc applications.

12 3 4

中文翻译

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与TISP4C115H3BJ相关器件

型号	品牌	获取价格	描述	数据表
TISP4C115H3BJ_10	BOURNS	获取价格	LOW CAPACITANCE BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
TISP4C115H3BJH3BJR-S	BOURNS	获取价格	Trigger Device
TISP4C125H3BJ	BOURNS	获取价格	LOW CAPACITANCE BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
TISP4C125H3BJH3BJR-S	BOURNS	获取价格	Trigger Device
TISP4C145H3BJ	BOURNS	获取价格	LOW CAPACITANCE BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
TISP4C145H3BJH3BJR-S	BOURNS	获取价格	Trigger Device
TISP4C145H3BJR	BOURNS	获取价格	Silicon Surge Protector, 145V V(BO) Max, 30A, SMB, 2 PIN
TISP4C145H3BJRS	BOURNS	获取价格	暂无描述
TISP4C145H3BJR-S	BOURNS	获取价格	暂无描述
TISP4C165H3BJ	BOURNS	获取价格	LOW CAPACITANCE BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS

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