TIP29C

更新时间： 2024-02-02 16:50:27

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
4页	141K
描述
POWER TRANSISTORS COMPLEMENTARY SILICON

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中文翻译

获取价格

技术参数
数据手册
替代型号

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TIP29C 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
Base Number Matches：	1

TIP29C 数据手册

Order this document

by TIP29B/D

SEMICONDUCTOR TECHNICAL DATA

. . . designed for use in general purpose amplifier and switching applications.

Compact TO–220 AB package.

MAXIMUM RATINGS

TIP29B

TIP30B

TIP29C

TIP30C

Rating

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Symbol

Unit

Vdc

Adc

1 AMPERE

POWER TRANSISTORS

COMPLEMENTARY

SILICON

CEO

100

5.0

Collector Current — Continuous

Peak

1.0

3.0

80–100 VOLTS

30 WATTS

Base Current

0.4

Adc

Total Power Dissipation @ T = 25 C

Derate above 25 C

0.24

Watts

W/ C

Total Power Dissipation @ T = 25 C

Derate above 25 C

2.0

0.016

Watts

W/ C

Unclamped Inductive Load Energy

(See Note 3)

Operating and Storage Junction

Temperature Range

T , T

–65 to +150

stg

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

CASE 221A–06

TO–220AB

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Case

62.5

C/W

θJA

4.167

θJC

ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Sustaining Voltage (1)

(I = 30 mAdc, I = 0)

TIP29B, TIP30B

TIP29C, TIP30C

100

—

Vdc

CEO(sus)

Collector Cutoff Current (V

= 60 Vdc, I = 0)

CEO

—

0.3

mAdc

Collector Cutoff Current

µAdc

CES

= 80 Vdc, V

= 100 Vdc, V

= 0)

TIP29B, TIP30B

TIP29C, TIP30C

—

200

Emitter Cutoff Current (V

= 5.0 Vdc, I = 0)

—

1.0

mAdc

—

EBO

ON CHARACTERISTICS (1)

DC Current Gain (I = 0.2 Adc, V

= 4.0 Vdc)

—

DC Current Gain (I = 1.0 Adc, V

Collector–Emitter Saturation Voltage (I = 1.0 Adc, I = 125 mAdc)

CE(sat)

—

0.7

1.3

Vdc

Base–Emitter On Voltage (I = 1.0 Adc, V

= 4.0 Vdc)

BE(on)

DYNAMIC CHARACTERISTICS

Current–Gain — Bandwidth Product (2)

3.0

—

MHz

—

(I = 200 mAdc, V

C CE

= 10 Vdc, f = 1.0 MHz)

test

Small–Signal Current Gain (I = 0.2 Adc, V

= 10 Vdc, f = 1.0 kHz)

(1) Pulse Test: Pulse Width

300 µs, Duty Cycle 2.0%.

(2) f = h • f

fe test

(3) This rating based on testing with L = 20 mH, R

= 100 Ω, V = 10 V, I = 1.8 A, P.R.F = 10 Hz.

CC C

REV 1

M^Mo^oto^tor^ro^ol^laa^{, I}B^ncip^{. 1}o⁹la⁹⁵r Power Transistor Device Data

12 3 4

中文翻译

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TIP29C 替代型号

型号	品牌	替代类型	描述	数据表
TIP29BG	ONSEMI	类似代替	Complementary Silicon Plastic Power Transistors
TIP29CG	ONSEMI	类似代替	Complementary Silicon Plastic Power Transistors
TIP32AG	ONSEMI	类似代替	Complementary Silicon Plastic Power Transistors

与TIP29C相关器件

型号	品牌	获取价格	描述	数据表
TIP29C16	MOTOROLA	获取价格	Power Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
TIP29C16A	MOTOROLA	获取价格	1 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-220AB
TIP29C-6200	RENESAS	获取价格	Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
TIP29C-6203	RENESAS	获取价格	Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
TIP29C-6226	RENESAS	获取价格	3A, 100V, NPN, Si, POWER TRANSISTOR, TO-220AB
TIP29C-6258	RENESAS	获取价格	3A, 100V, NPN, Si, POWER TRANSISTOR, TO-220AB
TIP29C-6261	RENESAS	获取价格	3A, 100V, NPN, Si, POWER TRANSISTOR, TO-220AB
TIP29C-6263	RENESAS	获取价格	3A, 100V, NPN, Si, POWER TRANSISTOR, TO-220AB
TIP29C-6264	RENESAS	获取价格	Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
TIP29C-6265	RENESAS	获取价格	3A, 100V, NPN, Si, POWER TRANSISTOR, TO-220AB

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