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TCR22-6 PDF预览

TCR22-6

更新时间： 2024-01-21 02:13:59
品牌 Logo 应用领域
TECCOR 栅极触发装置可控硅整流器
页数 文件大小 规格书
12页 199K
描述
Sensitive SCRs

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中文翻译

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TCR22-6 技术参数

生命周期：Transferred包装说明：CYLINDRICAL, O-PBCY-T3
Reach Compliance Code：unknownHTS代码：8541.30.00.80
风险等级：5.1配置：SINGLE
最大直流栅极触发电流：0.2 mAJEDEC-95代码：TO-92
JESD-30 代码：O-PBCY-T3元件数量：1
端子数量：3封装主体材料：PLASTIC/EPOXY
封装形状：ROUND封装形式：CYLINDRICAL
认证状态：Not Qualified最大均方根通态电流：1.5 A
断态重复峰值电压：400 V重复峰值反向电压：400 V
表面贴装：NO端子形式：THROUGH-HOLE
端子位置：BOTTOM触发设备类型：SCR
Base Number Matches：1

TCR22-6 数据手册

 浏览型号TCR22-6的Datasheet PDF文件第2页浏览型号TCR22-6的Datasheet PDF文件第3页浏览型号TCR22-6的Datasheet PDF文件第4页浏览型号TCR22-6的Datasheet PDF文件第6页浏览型号TCR22-6的Datasheet PDF文件第7页浏览型号TCR22-6的Datasheet PDF文件第8页 
Data Sheets  
Sensitive SCRs  
l2t  
V
I
I
V
P
P
G(AV)  
I
t
t
q
(9)  
dv/dt  
di/dt  
GT  
(4) (12) (22)  
H
GM  
(17)  
GRM  
GM  
(17)  
TSM  
(6) (13)  
gt  
(8)  
(5) (19)  
Volts  
TC  
Volts/µSec  
TC  
=
=
TC =  
mAmps  
Amps  
Volts  
Watts  
Watts  
Amps  
Amps/µSec  
µSec  
µSec  
Amps2Sec  
-40 °C  
25 °C  
MAX  
0.8  
0.8  
0.8  
0.8  
0.8  
0.8  
0.8  
0.8  
0.8  
0.8  
0.8  
0.8  
0.8  
0.8  
0.8  
0.8  
0.8  
0.8  
110 °C  
T
C = 110 °C  
MAX  
6
MIN  
6
60/50 Hz  
100/83  
100/83  
100/83  
100/83  
100/83  
100/83  
100/83  
100/83  
100/83  
100/83  
100/83  
100/83  
100/83  
100/83  
100/83  
100/83  
100/83  
100/83  
TYP  
10  
8
TYP  
4
MAX  
50  
50  
50  
45  
45  
45  
50  
50  
50  
45  
45  
45  
50  
50  
50  
45  
45  
45  
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
100  
100  
100  
100  
100  
100  
100  
100  
100  
100  
100  
100  
100  
100  
100  
100  
100  
100  
41  
41  
41  
41  
41  
41  
41  
41  
41  
41  
41  
41  
41  
41  
41  
41  
41  
41  
6
6
4
6
6
8
4
8
6
10  
8
5
8
6
5
8
6
8
5
6
6
10  
8
4
6
6
4
6
6
8
4
8
6
10  
8
5
8
6
5
8
6
8
5
6
6
10  
8
4
6
6
4
6
6
8
4
8
6
10  
8
5
8
6
5
8
6
8
5
(10) Test condition is maximum rated RMS current except TO-92  
devices are 1.2 APK; T106/T107 devices are 4 APK  
Electrical Specifications Notes  
.
(1) See Figure E5.1 through Figure E5.9 for current ratings at  
(11) See package outlines for lead form configurations. When ordering  
specified operating temperatures.  
(2) See Figure E5.10 for IGT versus TC or TL.  
special lead forming, add type number as suffix to part number.  
(12) VD = 6 V dc, RL = 100 ꢀ (See Figure E5.19 for simple test circuit  
for measuring gate trigger voltage and gate trigger current.)  
(3) See Figure E5.11 for instantaneous on-state current (iT) versus on-  
state voltage (vT) TYP.  
(13) See Figure E5.1 through Figure E5.9 for maximum allowable case  
temperature at maximum rated current.  
(4) See Figure E5.12 for VGT versus TC or TL.  
(5) See Figure E5.13 for IH versus TC or TL.  
(6) For more than one full cycle, see Figure E5.14.  
(7) 0.8 A to 4 A devices also have a pulse peak forward current on-  
state rating (repetitive) of 75 A. This rating applies for operation at  
60 Hz, 75 °C maximum tab (or anode) lead temperature, switching  
from 80 V peak, sinusoidal current pulse width of 10 µs minimum,  
15 µs maximum. See Figure E5.20 and Figure E5.21.  
(14) IGT = 500 µA maximum at TC = -40 °C for T106 devices  
(15) IH = 10 mA maximum at TC = -65 °C for 2N5064 Series and  
2N6565 Series devices  
(16) IH = 6 mA maximum at TC = -40 °C for T106 devices  
(17) Pulse Width ?10 µs  
(18) IGT = 350 µA maximum at TC = -65 °C for 2N5064 Series and  
2N6565 Series devices  
(8) See Figure E5.15 for t versus I  
.
GT  
gt  
(19) Latching current can be higher than 20 mA for higher IGT types.  
Also, latching current can be much higher at -40 °C. See Figure  
E5.18.  
(9) Test conditions as follows:  
– TC or TL ?80 °C, rectangular current waveform  
– Rate-of-rise of current ?10 A/µs  
(20) TC or TL = TJ for test conditions in off state  
– Rate-of-reversal of current ?5 A/µs  
(21) IDRM and IRRM = 50 µA for 2N5064 and 100 µA for 2N6565 at  
– ITM = 1 A (50 µs pulse), Repetition Rate = 60 pps  
– VRRM = Rated  
125 °C  
– VR = 15 V minimum, VDRM = Rated  
(22) TO-92 devices specified at -65 °C instead of -40 °C  
(23) TC = 110 °C  
– Rate-of-rise reapplied forward blocking voltage = 5 V/µs  
– Gate Bias = 0 V, 100 ꢀ (during turn-off time interval)  
©2002 Teccor Electronics  
Thyristor Product Catalog  
E5 - 5  
http://www.teccor.com  
+1 972-580-7777  
12345678...12

中文翻译

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