Datasheet > TBCW67A

TBCW67A

更新时间： 2024-04-09 18:58:23

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
4页	384K
描述
32V,0.8A,General Purpose PNP Bipolar Transistor

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TBCW67A 数据手册

PNP Silicon Epitaxial Planar Transistor

TBCW67

Electrical Characteristics (@ T_A= 25°C unless otherwise specified)

Parameter

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Current

Emitter Cut-off Current

TBCW67A

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test Condition

I_C= -10μA, I_E= 0

Min. Typ. Max. Unit

-45

-32

-5

I_C= -10mA, I_B= 0

I_E= -10μA, I_C= 0

V_CB= -32V, I_E= 0

V_EB= -4V, I_C= 0

-20

I_EBO

-20

120

180

100

160

250

100

TBCW67B

V_CE= -10V, I_C= -0.1mA

V_CE= -1V, I_C= -10mA

V_CE= -1V, I_C= -100mA

V_CE= -2V, I_C= -500mA

TBCW67C

TBCW67A

TBCW67B

TBCW67C

DC Current Gain

h_FE

TBCW67A

250

400

630

TBCW67B

TBCW67C

TBCW67A

TBCW67B

TBCW67C

I_C= -100mA, I_B= -10mA

I_C= -500mA, I_B= -50mA

I_C= -100mA, I_B= -10mA

I_C= -500mA, I_B= -50mA

-0.3

-0.7

-1.25

-2

Collector-emitter Saturation Voltage

V_CE(sat)

Base-emitter Saturation Voltage

Transition Frequency

V_BE(sat)

I_C= -50mA, V_CE= -5V

f = 20MHz

f_T

200

MHz

STM0681A: August 2022

www.gmesemi.com

123 4

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