Datasheet > TBAV21WS

TBAV21WS

更新时间： 2024-04-09 18:59:09

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
3页	353K
描述
0.2A,200V,Surface Mount Small Signal Switching Diodes

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TBAV21WS 数据手册

Product Specification

Silicon Epitaxial Planar Diode

TBAV21WS

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Characteristic

Symbol

Test Condition

I_R=100uA

Min

Max

Unit

Reverse Breakdown Voltage

V_(BR)R

250

I_F=100mA

1.0

1.25

0.1

Forward Voltage

Reverse Current

V_FM

I_R

I_F=200mA

V_R=200V

μA

V_R=200V，T_J=125℃

Capacitance between

terminals

C_T

t_rr

V_R=0,f=1.0MHz

I_F=I_R=30mA,

Reverse Recovery Time

I_rr=0.1×I_R,R_L=100Ω

TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

SWM0081A

www.gmesemi.com

123

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