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T82F126552DN PDF预览

T82F126552DN

更新时间: 2024-01-13 04:39:41
品牌 Logo 应用领域
POWEREX 栅极
页数 文件大小 规格书
2页 2013K
描述
Silicon Controlled Rectifier, 1000A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element, CASE T82, 3 PIN

T82F126552DN 技术参数

生命周期:Active包装说明:DISK BUTTON, O-XXDB-X3
针数:3Reach Compliance Code:unknown
HTS代码:8541.30.00.80风险等级:5.75
配置:SINGLE最大直流栅极触发电流:250 mA
JESD-30 代码:O-XXDB-X3元件数量:1
端子数量:3最高工作温度:125 °C
最低工作温度:-40 °C封装主体材料:UNSPECIFIED
封装形状:ROUND封装形式:DISK BUTTON
认证状态:Not Qualified最大均方根通态电流:1000 A
断态重复峰值电压:1200 V重复峰值反向电压:1200 V
表面贴装:YES端子面层:NICKEL
端子形式:UNSPECIFIED端子位置:UNSPECIFIED
触发设备类型:SCRBase Number Matches:1

T82F126552DN 数据手册

 浏览型号T82F126552DN的Datasheet PDF文件第2页 
173 Pavilion Lane, Youngwood, PA 15697 www.pwrx.com  

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