Datasheet > T1050H

T1050H

更新时间： 2024-01-24 21:17:17

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		可控硅
页数	文件大小	规格书
10页	136K
描述
10 A - 600 V - 150 °C H系列三端双向可控硅

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技术参数
数据手册

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T1050H 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	5.61
其他特性：	COMMON MODE CHOKE AVAILABLE, HEIGHT DIMENSION INCLUDES TERMINAL ALSO	认证：	UL
高度：	10.03 mm	长度：	24.19 mm
安装特点：	SURFACE MOUNT	最高工作温度：	70 °C
最低工作温度：		包装方法：	TRAY
物理尺寸：	24.19mm X 14.96mm X 10.03mm	表面贴装：	YES
变压器类型：	TELECOM TRANSFORMER	宽度：	14.96 mm
Base Number Matches：	1

T1050H 数据手册

Characteristics

T1035H, T1050H

Characteristics

Table 1.

Absolute Maximum Ratings

Symbol

Parameter

D²PAK, TO-220AB T_c= 135° C

Value

Unit

I_T(RMS)

RMS on-state current (full sine wave)

TO-220AB Ins

F = 50 Hz

T_c= 125° C

t = 20 ms

100

105

Non repetitive surge peak on-state

current (full cycle, T_jinitial = 25° C)

I_TSM

F = 60 Hz

t = 16.7 ms

I t

I t Value for fusing

t_p= 10 ms

A s

Critical rate of rise of on-state current

I_G= 2 x I_GT, t_r≤ 100 ns

dI/dt

F = 120 Hz

T_j= 150° C

T_j= 25° C

A/µs

Non repetitive surge peak off-state

voltage

_DRM/V_RRM

+ 100

V_DSM/V_RSM

t_p= 10 ms

t_p= 20 µs

I_GM

Peak gate current

T_j= 150° C

P_G(AV)

Average gate power dissipation

T_stg

T_j

Storage junction temperature range

Operating junction temperature range

- 40 to + 150

° C

Table 2.

Symbol

Electrical Characteristics (T_j= 25° C, unless otherwise specified)

Value

Test Conditions

Quadrant

Unit

T1035H

T1050H

(1)

I_GT

I - II - III

MAX.

MIN.

V_D= 12 V R_L= 33 Ω

V_GT

1.0

V_GD

V_D= V_DRM, R_L= 3.3 kΩ

0.15

(2)

I_H

I_T= 500 mA

MAX.

I - III

I_L

I_G= 1.2 I_GT

MAX.

110

1500

dV/dt ⁽²⁾

V_D= 67% V_DRM,gate open, T_j= 150° C

MIN.

1000

V/µs

(dI/dt)c ⁽²⁾Without snubber, T_j= 150° C

A/ms

1. minimum I

is guaranted at 20% of I

max.

2. for both polarities of A2 referenced to A1.

2/10

123 4 5 6 7...10

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