Datasheet > T0835H-8K

T0835H-8K

更新时间： 2023-12-06 20:08:19

品牌	Logo	应用领域
捷捷微 - JJM		可控硅
页数	文件大小	规格书
10页	1295K
描述
高结温双向可控硅

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T0835H-8K 数据手册

T0835H-8K

JieJie Microelectronics Co., Ltd.

FIG.1 Maximum power dissipation versus RMS

FIG.2: RMS on-state current versus case

on-state current

temperature

I_T(RMS)(A)

P(W)

132℃

100

125

150

_T(RMS)(A)

T_C(℃)

FIG.3: RMS on-state current versus ambient

temperature (printed circuit board FR4,copper

thickness:35μm)(full cycle)

FIG.4: Surge peak on-state current versus

number of cycles

I_TSM(A)

I_T(RMS)(A)

2.5

T_c=25℃,t_p=20ms,one cycle,sine

1.5

0.5

1.E+0

1.E+1

1.E+2

Number of cycles

1.E+3

1.E+4

1.E+5

100

125

150

T_a(℃)

FIG.5: On-state characteristics

FIG.6: Non-repetitive surge peak on-state

XXXXXXXXXXXXXXXXXXXXXXXXXXXXXXXX

XXXXXXXXXXX

current for a sinusoidal pulse with width t_p<20ms,

and corresponding value of I²t (dI/dt<100A/μs)

I_TM(A)

100

I_TSM(A), I²t(A²s)

Tj=25℃ typ

Tj=25℃ max

Tj=150℃ typ

1000

I_TSM

dI/dt

100

I²t

0.5

1.5

2.5

3.5

0.01

0.1

V_TM(V)

t_p(ms)

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