Datasheet > SX5819

SX5819

更新时间： 2024-01-21 09:12:21

品牌	Logo	应用领域
森美特 - SUNMATE		/
页数	文件大小	规格书
2页	346K
描述
1A Patch Schottky diode 40V SOD-123 series

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中文翻译

获取价格

数据手册

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SX5819 数据手册

SX5817- SX5819

SURFACE MOUNT SCHOTTKY BARRIER DIODES

VOLTAGE RANGE: 20 - 40V

CURRENT: 1.0 A

Features

Metal-Semiconductorjunction with guard ring

Epitaxial construction

Low forward voltage drop,low switching losses

High surge capability

For use in low voltage,high frequency inverters free

wheeling,and polarity protection applications

The plastic material carries U/L recognition 94V-0

SOD-123FL

Mechanical Data

Dim Min Max

Typ

3.58 3.72 3.65

2.72 2.78 2.75

1.77 1.83 1.80

1.02 1.08 1.05

0.097 1.03 1.00

0.13 0.17 0.15

0.53 0.57 0.55

Case: JEDEC SOD-123FL molded

plastic body over passivated junction

Terminals

solderable per MIL-STD-750,

: Plated axial leads,

Method 2026

Polarity

Mounting Position

: Color band denotes cathode end

All Dimensions in mm

: Any

Weight

:0.0007 ounce, 0.02 grams

Maximum Ratings and Electrical Characteristics

T_A= 25ꢀC unless otherwise specified

For capacitive load, derate current by 20%.

Single phase, half wave, 60Hz, resistive or inductive load.

Characteristic

Symbol

Unit

SX5817

SX5818

SX5819

Maximum recurrent peak reverse voltage

Maximum RMS v oltage

V_RRM

V_RMS

V_DC

Maximum DC blocking voltage

Maximum average forw ard rectified current

1.0

I_F(AV)

9.5mm lead length,

@T_A=75

Peak forw ard surge current

8.3ms single half-sine-w ave

superimposed on rated load @T_J=70

I_FSM

V_F

25.0

0.45

0.75

0.55

0.875

Maximum instantaneous forw ard voltage @ 1.0A

z (Note 1)

0.60

0.90

@ 3.0A

Maximum reverse current

@T_A=25

@T_A=100

1.0

I_R

at rated DC blocking voltage

10.0

Typical junction capacitance (Note2)

Typical thermal resistance (Note3)

110

C_J

R_θ

/ W

Operating junction temperature range

Storage temperature range

- 55 ---- + 125

- 55 ---- + 150

T_J

T_STG

NOTE: 1. Pulse test : 300 s pulse width,1% duty cy cle.

2. Measured at 1.0MH_Zand applied reverse voltage of 4.0V DC.

3.Thermal resistance junction to ambient

1 of 2

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