Datasheet > SX5819

SX5819

更新时间： 2024-09-29 12:22:31

品牌	Logo	应用领域
台芯 - TAYCHIPST		肖特基二极管
页数	文件大小	规格书
2页	3426K
描述
Surface Mount Schottky Barrier Rectifiers

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中文翻译

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数据手册

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SX5819 数据手册

SX5817 THRU SX5819

20V -40V 1.0A

Surface Mount Schottky Barrier Rectifiers

FEATURES

Metal-Semiconductor junction with guard ring

Epitaxial construction

SOD-123FL

Low forward voltage drop,low switching losses

High surge capability

For use in low voltage,high frequency inverters free

wheeling,and polarityprotection applications

The plastic material carries U/L recognition 94V-0

Mechanical Data

Case:JEDEC SOD-123FL,molded plastic

Terminals: Solderable per

MIL- STD-202,method 208

Polarity: Color band denotes cathode

Weight: 0.0008 ounces,0.22 grams

Mounting position: Any

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 ambient temperature unless otherwise specified.

Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.

SX5817

SX5818

SX5819

UNITS

Device marking code

Maximum recurrent peak reverse voltage

Maximum RMS v oltage

V_RRM

V_RMS

V_DC

Maximum DC blocking voltage

Maximum average forw ard rectified current

1.0

I_F(AV)

I_FSM

V_F

9.5mm lead length,

@T_A=75

Peak forw ard surge current

8.3ms single half-sine-w ave

25.0

superimposed on rated load @T_J=70

0.45

0.75

0.55

0.875

Maximum instantaneous forw ard voltage @ 1.0A

z (Note 1)

0.60

0.90

@ 3.0A

Maximum reverse current

@T_A=25

@T_A=100

1.0

I_R

at rated DC blocking voltage

10.0

Typical junction capacitance (Note2)

Typical thermal resistance (Note3)

110

C_J

R_θ

/ W

Operating junction temperature range

Storage temperature range

- 55 ---- + 125

- 55 ---- + 150

T_J

T_STG

NOTE: 1. Pulse test : 300 s pulse width,1% duty cy cle.

2. Measured at 1.0MH_Zand applied reverse voltage of 4.0V DC.

3.Thermal resistance junction to ambient

1 of 2

E-mail: sales@taychipst.com

Web Site: www.taychipst.com

中文翻译

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