SW8N70D
Electrical characteristic ( TC = 25oC unless otherwise specified )
Symbol
Parameter
Test conditions
Min.
Typ.
Max. Unit
Off characteristics
BVDSS
Drain to source breakdown voltage
VGS=0V, ID=250uA
700
V
ΔBVDSS Breakdown voltage temperature
ID=250uA, referenced to 25oC
0.52
V/oC
/ ΔTJ
coefficient
VDS=700V, VGS=0V
VDS=560V, TC=125oC
VGS=30V, VDS=0V
VGS=-30V, VDS=0V
1
uA
uA
nA
nA
IDSS
Drain to source leakage current
50
Gate to source leakage current, forward
Gate to source leakage current, reverse
100
-100
IGSS
On characteristics
VGS(TH)
RDS(ON)
Gfs
Gate threshold voltage
VDS=VGS, ID=250uA
VGS=10V, ID=4A
VDS=30V, ID=4A
2.5
4
V
Ω
S
Drain to source on state resistance
Forward transconductance
1.0
8
1.2
Dynamic characteristics
Ciss
Coss
Crss
td(on)
tr
Input capacitance
1740
118
12
Output capacitance
Reverse transfer capacitance
Turn on delay time
Rising time
V
GS=0V, VDS=25V, f=1MHz
pF
ns
27
VDS=350V, ID=8A, RG=25Ω,
VGS=10V
43
td(off)
tf
Turn off delay time
Fall time
98
(note 4,5)
41
Qg
Total gate charge
Gate-source charge
Gate-drain charge
Gate resistance
37
V
DS=560V,VGS=10V,ID=8A,
Qgs
Qgd
Rg
Ig=4mA
9
nC
(note 4,5)
15
VDS=0V, Scan F mode
1.6
Ω
Source to drain diode ratings characteristics
Symbol
IS
Parameter
Continuous source current
Pulsed source current
Test conditions
Min.
Typ.
Max. Unit
8
A
A
Integral reverse p-n Junction
diode in the MOSFET
ISM
32
1.4
VSD
trr
Diode forward voltage drop.
Reverse recovery time
IS=8A, VGS=0V
V
498
4.4
ns
uC
IS=8A, VGS=0V,
dIF/dt=100A/us
Qrr
Reverse recovery charge
※. Notes
1.
2.
3.
4.
5.
Repeatitive rating : pulse width limited by junction temperature.
L =16.5mH, IAS =8A, VDD=50V, RG=25Ω, Starting TJ = 25oC
ISD ≤ 8A, di/dt = 100A/us, VDD ≤ BVDSS, Staring TJ =25oC
Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%.
Essentially independent of operating temperature.
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Apr. 2019. Rev. 4.0
2/6