5秒后页面跳转
SW8N70D PDF预览

SW8N70D

更新时间: 2024-04-09 19:00:01
品牌 Logo 应用领域
芯派科技 - SEMIPOWER /
页数 文件大小 规格书
6页 775K
描述
TO-220F,TO-262N

SW8N70D 数据手册

 浏览型号SW8N70D的Datasheet PDF文件第1页浏览型号SW8N70D的Datasheet PDF文件第3页浏览型号SW8N70D的Datasheet PDF文件第4页浏览型号SW8N70D的Datasheet PDF文件第5页浏览型号SW8N70D的Datasheet PDF文件第6页 
SW8N70D  
Electrical characteristic ( TC = 25oC unless otherwise specified )  
Symbol  
Parameter  
Test conditions  
Min.  
Typ.  
Max. Unit  
Off characteristics  
BVDSS  
Drain to source breakdown voltage  
VGS=0V, ID=250uA  
700  
V
ΔBVDSS Breakdown voltage temperature  
ID=250uA, referenced to 25oC  
0.52  
V/oC  
/ ΔTJ  
coefficient  
VDS=700V, VGS=0V  
VDS=560V, TC=125oC  
VGS=30V, VDS=0V  
VGS=-30V, VDS=0V  
1
uA  
uA  
nA  
nA  
IDSS  
Drain to source leakage current  
50  
Gate to source leakage current, forward  
Gate to source leakage current, reverse  
100  
-100  
IGSS  
On characteristics  
VGS(TH)  
RDS(ON)  
Gfs  
Gate threshold voltage  
VDS=VGS, ID=250uA  
VGS=10V, ID=4A  
VDS=30V, ID=4A  
2.5  
4
V
S
Drain to source on state resistance  
Forward transconductance  
1.0  
8
1.2  
Dynamic characteristics  
Ciss  
Coss  
Crss  
td(on)  
tr  
Input capacitance  
1740  
118  
12  
Output capacitance  
Reverse transfer capacitance  
Turn on delay time  
Rising time  
V
GS=0V, VDS=25V, f=1MHz  
pF  
ns  
27  
VDS=350V, ID=8A, RG=25Ω,  
VGS=10V  
43  
td(off)  
tf  
Turn off delay time  
Fall time  
98  
(note 4,5)  
41  
Qg  
Total gate charge  
Gate-source charge  
Gate-drain charge  
Gate resistance  
37  
V
DS=560V,VGS=10V,ID=8A,  
Qgs  
Qgd  
Rg  
Ig=4mA  
9
nC  
(note 4,5)  
15  
VDS=0V, Scan F mode  
1.6  
Source to drain diode ratings characteristics  
Symbol  
IS  
Parameter  
Continuous source current  
Pulsed source current  
Test conditions  
Min.  
Typ.  
Max. Unit  
8
A
A
Integral reverse p-n Junction  
diode in the MOSFET  
ISM  
32  
1.4  
VSD  
trr  
Diode forward voltage drop.  
Reverse recovery time  
IS=8A, VGS=0V  
V
498  
4.4  
ns  
uC  
IS=8A, VGS=0V,  
dIF/dt=100A/us  
Qrr  
Reverse recovery charge  
. Notes  
1.  
2.  
3.  
4.  
5.  
Repeatitive rating : pulse width limited by junction temperature.  
L =16.5mH, IAS =8A, VDD=50V, RG=25Ω, Starting TJ = 25oC  
ISD ≤ 8A, di/dt = 100A/us, VDD ≤ BVDSS, Staring TJ =25oC  
Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%.  
Essentially independent of operating temperature.  
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.  
Apr. 2019. Rev. 4.0  
2/6  

与SW8N70D相关器件

型号 品牌 描述 获取价格 数据表
SW8N70K SEMIPOWER TO-220F,TO-252

获取价格

SW8N80K SEMIPOWER TO-220F,TO-251,TO-251N,TO-252,TO-262

获取价格

SW8N90KU SEMIPOWER TO-262N

获取价格

SW90-0001 TE GaAs SPST Switch, Absorptive, Single Supply, DC - 4 GHz

获取价格

SW90-0001-TB TE GaAs SPST Switch, Absorptive, Single Supply, DC - 4 GHz

获取价格

SW90-0001TR TE GaAs SPST Switch, Absorptive, Single Supply, DC - 4 GHz

获取价格