SW6N90D
Electrical characteristic ( TC = 25oC unless otherwise specified )
Symbol
Parameter
Test conditions
Min.
Typ.
Max. Unit
Off characteristics
BVDSS
Drain to source breakdown voltage
VGS=0V, ID=250uA
900
V
ΔBVDSS Breakdown voltage temperature
ID=250uA, referenced to 25oC
0.51
V/oC
/ ΔTJ
coefficient
VDS=900V, VGS=0V
VDS=720V, TC=125oC
VGS=30V, VDS=0V
VGS=-30V, VDS=0V
1
uA
uA
nA
nA
IDSS
Drain to source leakage current
50
Gate to source leakage current, forward
Gate to source leakage current, reverse
100
-100
IGSS
On characteristics
VGS(TH)
RDS(ON)
Gfs
Gate threshold voltage
VDS=VGS, ID=250uA
VGS=10V, ID=3A
VDS=30V, ID=3A
2.5
4.5
2.3
V
Ω
S
Drain to source on state resistance
Forward transconductance
1.8
7.3
Dynamic characteristics
Ciss
Coss
Crss
td(on)
tr
Input capacitance
1755
124
11
Output capacitance
Reverse transfer capacitance
Turn on delay time
Rising time
V
GS=0V, VDS=25V, f=1MHz
pF
ns
23
VDS=450V, ID=6A, RG=25Ω,
VGS=10V
32
td(off)
tf
Turn off delay time
Fall time
99
(note 4,5)
36
Qg
Total gate charge
Gate-source charge
Gate-drain charge
Gate resistance
42
V
DS=720V,VGS=10V,ID=6A,
Qgs
Qgd
Rg
Ig=2mA
9
nC
(note 4,5)
17
VDS=0V, Scan F mode
1.7
Ω
Source to drain diode ratings characteristics
Symbol
IS
Parameter
Continuous source current
Pulsed source current
Test conditions
Min.
Typ.
Max. Unit
6
A
A
Integral reverse p-n Junction
diode in the MOSFET
ISM
24
1.4
VSD
trr
Diode forward voltage drop.
Reverse recovery time
IS=6A, VGS=0V
V
660
5.6
ns
uC
IS=6A, VGS=0V,
dIF/dt=100A/us
Qrr
Reverse recovery charge
※. Notes
1.
2.
3.
4.
5.
Repeatitive rating : pulse width limited by junction temperature.
L =28.7mH, IAS =6A, VDD=50V, RG=25Ω, Starting TJ = 25oC
ISD ≤ 6A, di/dt = 100A/us, VDD ≤ BVDSS, Staring TJ =25oC
Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%.
Essentially independent of operating temperature.
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Apr. 2019. Rev. 4.0
2/6