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SW13N70D PDF预览

SW13N70D

更新时间: 2024-04-09 18:59:09
品牌 Logo 应用领域
芯派科技 - SEMIPOWER /
页数 文件大小 规格书
6页 592K
描述
TO-220F

SW13N70D 数据手册

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SW13N70D  
Electrical characteristic ( TC = 25oC unless otherwise specified )  
Symbol  
Parameter  
Test conditions  
Min.  
Typ.  
Max. Unit  
Off characteristics  
BVDSS  
Drain to source breakdown voltage  
VGS=0V, ID=250uA  
700  
V
ΔBVDSS Breakdown voltage temperature  
ID=250uA, referenced to 25oC  
VDS=700, VGS=0V  
0.51  
V/oC  
/ ΔTJ  
coefficient  
1
uA  
uA  
nA  
nA  
IDSS  
Drain to source leakage current  
VDS=560V, TC=125oC  
VGS=30V, VDS=0V  
50  
Gate to source leakage current, forward  
Gate to source leakage current, reverse  
100  
-100  
IGSS  
VGS=-30V, VDS=0V  
On characteristics  
VGS(TH)  
RDS(ON)  
Gfs  
Gate threshold voltage  
VDS=VGS, ID=250uA  
VGS=10V, ID=6.5A  
VDS=30V, ID=6.5A  
2.5  
4.5  
0.9  
V
S
Drain to source on state resistance  
Forward transconductance  
0.7  
11  
Dynamic characteristics  
Ciss  
Coss  
Crss  
td(on)  
tr  
Input capacitance  
1861  
170  
17  
Output capacitance  
Reverse transfer capacitance  
Turn on delay time  
Rising time  
VGS=0V, VDS=25V, f=1MHz  
pF  
ns  
28  
VDS=350V, ID=13A, RG=25Ω,  
VGS=10V  
54  
td(off)  
tf  
Turn off delay time  
Fall time  
112  
51  
(note 4,5)  
Qg  
Total gate charge  
Gate-source charge  
Gate-drain charge  
Gate resistance  
52  
VDS=560V, VGS=10V, ID=13A ,  
Ig=5mA  
Qgs  
Qgd  
Rg  
12  
nC  
(note 4,5)  
22  
VDS=0V, Scan F mode  
1.8  
Source to drain diode ratings characteristics  
Symbol  
IS  
Parameter  
Continuous source current  
Pulsed source current  
Test conditions  
Min.  
Typ.  
Max. Unit  
13  
52  
A
A
Integral reverse p-n Junction  
diode in the MOSFET  
ISM  
VSD  
trr  
Diode forward voltage drop.  
Reverse recovery time  
IS=13A, VGS=0V  
1.4  
V
544  
6.8  
ns  
uC  
IS=13A, VGS=0V,  
dIF/dt=100A/us  
Qrr  
Reverse recovery charge  
. Notes  
1.  
2.  
3.  
4.  
5.  
Repeatitive rating : pulse width limited by junction temperature.  
L =4.55mH, IAS =13A, VDD=100V, RG=25Ω, Starting TJ = 25oC  
ISD ≤13A, di/dt = 100A/us, VDD ≤ BVDSS, Staring TJ =25oC  
Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%.  
Essentially independent of operating temperature.  
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.  
Jul. 2018. Rev. 2.0  
2/6  

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