SW13N70D
Electrical characteristic ( TC = 25oC unless otherwise specified )
Symbol
Parameter
Test conditions
Min.
Typ.
Max. Unit
Off characteristics
BVDSS
Drain to source breakdown voltage
VGS=0V, ID=250uA
700
V
ΔBVDSS Breakdown voltage temperature
ID=250uA, referenced to 25oC
VDS=700, VGS=0V
0.51
V/oC
/ ΔTJ
coefficient
1
uA
uA
nA
nA
IDSS
Drain to source leakage current
VDS=560V, TC=125oC
VGS=30V, VDS=0V
50
Gate to source leakage current, forward
Gate to source leakage current, reverse
100
-100
IGSS
VGS=-30V, VDS=0V
On characteristics
VGS(TH)
RDS(ON)
Gfs
Gate threshold voltage
VDS=VGS, ID=250uA
VGS=10V, ID=6.5A
VDS=30V, ID=6.5A
2.5
4.5
0.9
V
Ω
S
Drain to source on state resistance
Forward transconductance
0.7
11
Dynamic characteristics
Ciss
Coss
Crss
td(on)
tr
Input capacitance
1861
170
17
Output capacitance
Reverse transfer capacitance
Turn on delay time
Rising time
VGS=0V, VDS=25V, f=1MHz
pF
ns
28
VDS=350V, ID=13A, RG=25Ω,
VGS=10V
54
td(off)
tf
Turn off delay time
Fall time
112
51
(note 4,5)
Qg
Total gate charge
Gate-source charge
Gate-drain charge
Gate resistance
52
VDS=560V, VGS=10V, ID=13A ,
Ig=5mA
Qgs
Qgd
Rg
12
nC
(note 4,5)
22
VDS=0V, Scan F mode
1.8
Ω
Source to drain diode ratings characteristics
Symbol
IS
Parameter
Continuous source current
Pulsed source current
Test conditions
Min.
Typ.
Max. Unit
13
52
A
A
Integral reverse p-n Junction
diode in the MOSFET
ISM
VSD
trr
Diode forward voltage drop.
Reverse recovery time
IS=13A, VGS=0V
1.4
V
544
6.8
ns
uC
IS=13A, VGS=0V,
dIF/dt=100A/us
Qrr
Reverse recovery charge
※. Notes
1.
2.
3.
4.
5.
Repeatitive rating : pulse width limited by junction temperature.
L =4.55mH, IAS =13A, VDD=100V, RG=25Ω, Starting TJ = 25oC
ISD ≤13A, di/dt = 100A/us, VDD ≤ BVDSS, Staring TJ =25oC
Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%.
Essentially independent of operating temperature.
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Jul. 2018. Rev. 2.0
2/6