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STT2603 PDF预览

STT2603

更新时间: 2024-01-09 12:08:07
品牌 Logo 应用领域
SECOS /
页数 文件大小 规格书
4页 495K
描述
P-Channel Enhancement Mode Power Mos.FET

STT2603 数据手册

 浏览型号STT2603的Datasheet PDF文件第2页浏览型号STT2603的Datasheet PDF文件第3页浏览型号STT2603的Datasheet PDF文件第4页 
STT2603  
Ω
-5A, -20V,RDS(ON) 65m  
Elektronische Bauelemente  
P-Channel Enhancement Mode Power Mos.FET  
RoHS Compliant Product  
Description  
The STT2603 utilized advanced processing techniques to achieve the lowest  
possible on-resistance, extremely efficient and cost-effectiveness device.  
industrial surface  
The STT2603 is universally used for all commercial  
mount application .  
Features  
* Small package outline  
* Simple drive requirement  
D
6
S
4
D
5
Millimeter  
Min. Max.  
1.10 MAX.  
Millimeter  
Min. Max.  
0.45 REF.  
0.60 REF.  
D
REF.  
REF.  
A
A1  
A2  
c
D
E
L
L1  
b
e
2603  
0
0.70  
0.10  
1.00  
Date Code  
G
0°  
0.30  
10°  
0.50  
0.12 REF.  
3
G
1
D
2
D
2.70  
2.60  
1.40  
3.10  
3.00  
1.80  
0.95 REF.  
1.90 REF.  
S
e1  
E1  
Absolute Maximum Ratings  
Parameter  
Drain-Source Voltage  
Symbol  
VDS  
Ratings  
Unit  
V
-20  
12  
-5  
Gate-Source Voltage  
VGS  
V
A
Continuous Drain Current (Note 3)  
Continuous Drain Current (Note 3)  
Pulsed Drain Current (Note 1,2)  
Total Power Dissipation  
к
к
ID@TA=25  
ID@TA=70  
IDM  
-4  
A
A
-20  
к
PD@TA=25  
Tj, Tstg  
2
W
0.016  
W/eC  
eC  
Linear Derating Factor  
-55~+150  
Operating Junction and Storage Temperature Range  
Thermal Data  
Parameter  
Symbol  
Ratings  
Unit  
eC /W  
Rthj-a  
Thermal Resistance Junction-ambient (Note 3) (Max)  
62.5  
http://www.SeCoSGmbH.com/  
Any changing of specification will not be informed individual  
01-Jun-2002 Rev. A  
Page 1 of 4  

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