STK3NA50

更新时间： 2024-01-31 23:12:00

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		晶体晶体管功率场效应晶体管开关脉冲
页数	文件大小	规格书
10页	182K
描述
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

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技术参数
数据手册

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STK3NA50 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
Reach Compliance Code：	compliant	风险等级：	5.84
Is Samacsys：	N	配置：	Single
最大漏极电流 (Abs) (ID)：	2.7 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	50 W
子类别：	FET General Purpose Power	表面贴装：	NO
Base Number Matches：	1

STK3NA50 数据手册

STK3NA50

N - CHANNEL ENHANCEMENT MODE

FAST POWER MOS TRANSISTOR

TYPE

V_DSS

R_DS(on)

< 3 Ω

I_D

STK3NA50

500 V

2.7 A

■

TYPICAL R_DS(on)= 2.4 Ω

± 30V GATE TO SOURCE VOLTAGE RATING

100% AVALANCHE TESTED

REPETITIVE AVALANCHE DATA AT 100^oC

LOW INTRINSIC CAPACITANCES

GATE GHARGE MINIMIZED

REDUCED THRESHOLD VOLTAGE SPREAD

DESCRIPTION

SOT-82

SOT-194

(option)

This series of POWER MOSFETS represents the

most advanced high voltage technology. The op-

timized cell layout coupled with a new proprietary

edge termination concur to give the device low

R_DS(on)and gate charge, unequalled ruggedness

and superior switching performance.

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

■

HIGH CURRENT, HIGH SPEED SWITCHING

SWITCH MODE POWER SUPPLIES (SMPS)

DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVE

ABSOLUTE MAXIMUM RATINGS

Symbol

V_DS

Parameter

Value

500

Unit

Drain-source Voltage (V_GS= 0)

Drain- gate Voltage (R_GS= 20 kΩ)

Gate-source Voltage

Drain Current (continuous) at T_c= 25 ^oC

Drain Current (continuous) at T_c= 100 ^oC

Drain Current (pulsed)

V_{DG R}

V_GS

500

± 30

2.7

I_D

1.7

I_DM(•)

P_tot

10.8

Total Dissipation at T_c= 25 ^oC

Derating Factor

0.4

W/^oC

^oC

T_stg

T_j

Storage Temperature

-65 to 150

150

Max. Operating Junction Temperature

(•) Pulse width limited by safe operating area

1/10

November 1996

12 3 4 5 6 7...10

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