Datasheet > SPA-2318

SPA-2318

更新时间： 2024-02-08 01:47:35

品牌	Logo	应用领域
STANFORD		放大器射频微波功率放大器
页数	文件大小	规格书
6页	269K
描述
2150 MHz 1 Watt Power Amplifier with Active Bias

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技术参数
数据手册

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SPA-2318 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	SOP8,.25	Reach Compliance Code：	unknown
ECCN代码：	5A991.G	HTS代码：	8542.33.00.01
风险等级：	5.8	其他特性：	HIGH RELIABILITY
特性阻抗：	50 Ω	构造：	COMPONENT
增益：	21 dB	最大输入功率 (CW)：	16 dBm
JESD-609代码：	e3	安装特点：	SURFACE MOUNT
功能数量：	1	端子数量：	8
最大工作频率：	2200 MHz	最小工作频率：	1700 MHz
最高工作温度：	85 °C	最低工作温度：	-40 °C
封装主体材料：	PLASTIC/EPOXY	封装等效代码：	SOP8,.25
电源：	5 V	射频/微波设备类型：	NARROW BAND MEDIUM POWER
子类别：	RF/Microwave Amplifiers	最大压摆率：	425 mA
表面贴装：	YES	技术：	GAAS
端子面层：	Matte Tin (Sn)	最大电压驻波比：	1.6
Base Number Matches：	1

SPA-2318 数据手册

Preliminary

Product Description

SPA-2318

Stanford Microdevices’ SPA-2318 is a high efficiency GaAs

Heterojunction Bipolar Transistor (HBT) amplifier housed in

a low-cost surface-mountable plastic package. These HBT

amplifiers are fabricated using molecular beam epitaxial

growth technology which produces reliable and consistent

performance from wafer to wafer and lot to lot.

2150 MHz 1 Watt Power Amplifier

with Active Bias

This product is specifically designed for use as a driver

amplifier for infrastructure equipment in the 2150 MHz PCS

band. Its high linearity makes it an ideal choice for multi-carrier

and digital applications.

Product Features

•High Linearity Performance:

+47 dBm Typ. OIP3 at 2140 MHz

+21.7 dBm W-CDMA Channel Power

at -45 dBc ACP

• On-chip Active Bias Control

VC1

•High Gain: 23 dB Typ.

Active

VBIAS

Bias

•Patented High Reliability GaAsHBT Technology

• Surface-Mountable Plastic Package

RFOUT/

VC2

RFIN

Applications

VPC2

• W-CDMA Systems

• Multi-Carrier Applications

Parameters: Test Conditions:

Symbol

Units

Min.

Typ.

Max.

Z₀= 50 Ohms Temp = 25ºC, Vcc=5.0V

f₀

Frequency of Operation

MHz

2110

2140

2170

Output Power at 1dB Compression

Small Signal Gain

dBm

P_1dB

S₂₁

VSWR

Input VSWR

1.5:1

Output Third Order Intercept Point

Power out per tone = +14dBm

OIP₃

dBm

5.0

400

Noise Figure

Device Current

Icc

Ibias = 10mA, Ic1 = 70mA, Ic2 = 320 mA

R_{th j-l}

Thermal Resistance (junction - lead)

ºC/W

The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.

Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are

subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not

authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems.

726 Palomar Ave., Sunnyvale, CA 94085

Phone: (800) SMI-MMIC

http://www.stanfordmicro.com

EDS-101432 Rev B

12 3 4 5 6

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