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ST24C04RM3TR PDF预览

ST24C04RM3TR

更新时间: 2024-09-30 14:36:07
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟光电二极管内存集成电路
页数 文件大小 规格书
2页 27K
描述
512X8 I2C/2-WIRE SERIAL EEPROM, PDSO8, 0.150 INCH, PLASTIC, SO-8

ST24C04RM3TR 技术参数

生命周期:Obsolete零件包装代码:SOIC
包装说明:SOP,针数:8
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.75
Is Samacsys:N其他特性:1 MILLION ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION; 2 WIRE SERIAL INTERFACE; PAGE WRITE
最大时钟频率 (fCLK):0.1 MHz数据保留时间-最小值:40
JESD-30 代码:R-PDSO-G8长度:4.9 mm
内存密度:4096 bit内存集成电路类型:EEPROM
内存宽度:8功能数量:1
端子数量:8字数:512 words
字数代码:512工作模式:SYNCHRONOUS
最高工作温度:125 °C最低工作温度:-40 °C
组织:512X8封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装形状:RECTANGULAR
封装形式:SMALL OUTLINE并行/串行:SERIAL
认证状态:Not Qualified座面最大高度:1.75 mm
串行总线类型:I2C最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):1.8 V表面贴装:YES
技术:CMOS温度等级:AUTOMOTIVE
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL宽度:3.9 mm
最长写入周期时间 (tWC):10 msBase Number Matches:1

ST24C04RM3TR 数据手册

 浏览型号ST24C04RM3TR的Datasheet PDF文件第2页 
ST24C04, ST25C04  
ST24W04, ST25W04  
SERIAL 4K (512 x 8) EEPROM  
DATA BRIEFING  
1 MILLION ERASE/WRITE CYCLES with  
40 YEARS DATA RETENTION  
SINGLE SUPPLY VOLTAGE:  
– 3V to 5.5V for ST24x04 versions  
– 2.5V to 5.5V for ST25x04 versions  
– 1.8V to 5.5V for ST24C04R version only  
HARDWARE WRITE CONTROL VERSIONS:  
ST24W04 and ST25W04  
PROGRAMMABLE WRITE PROTECTION  
TWO WIRE SERIAL INTERFACE, FULLY I2C  
BUS COMPATIBLE  
8
8
1
1
PSDIP8 (B)  
0.25mm Frame  
SO8 (M)  
150mil Width  
BYTE and MULTIBYTE WRITE (up to 4  
BYTES)  
PAGE WRITE (up to 8 BYTES)  
BYTE, RANDOM and SEQUENTIAL READ  
MODES  
Logic Diagram  
SELF TIMED PROGRAMMING CYCLE  
AUTOMATIC ADDRESS INCREMENTING  
ENHANCED ESD/LATCH UP  
PERFORMANCES  
V
CC  
DESCRIPTION  
This specification covers a range of 4K bits I2C bus  
EEPROM products, the ST24/25C04, the  
ST24C04R and the ST24/25W04. In the text, prod-  
ucts are referred to as ST24/25x04, where "x" is:  
"C" for Standard version and "W" for hardware  
Write Control version.  
2
E1-E2  
PRE  
SDA  
ST24x04  
ST25x04  
The ST24/25x04 are 4K bit electrically erasable  
programmable memories (EEPROM), organized  
as 2 blocks of 256 x 8 bits. They are manufactured  
in SGS-THOMSON’s Hi-Endurance Advanced  
CMOS technology which guarantees an endur-  
ance of one million erase/write cycles with a data  
retention of 40 years. The memories operate with  
a power supply value as low as 1.8V for the  
ST24C04R only.  
St24C04R  
SCL  
MODE/WC*  
V
SS  
AI00851D  
Both Plastic Dual-in-Line and Plastic Small Outline  
packages are available.  
Note: WC signal is only available for ST24/25W04 products.  
B24C04/607  
1/2  
Complete data available on DATA-on-DISC CD-ROM or at www.st.com  

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