Datasheet > ST083S10PFN1

ST083S10PFN1

更新时间： 2022-12-11 19:15:35

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	240K
描述
INVERTER GRADE THYRISTORS

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ST083S10PFN1 数据手册

ST083S Series

Bulletin I25185 rev. C 03/03

On-state Conduction

Parameter

ST083S

2.15

Units Conditions

V_TM

Max. peak on-state voltage

I_TM= 300A, T_J= T_Jmax, t = 10ms sine wave pulse

V_T(TO)1Low level value of threshold

voltage

1.46

1.52

(16.7% x π x I_T(AV)< I < π x I_T(AV)), T_J= T_Jmax.

(I > π x I_T(AV)), T_J= T_Jmax.

V_T(TO)2High level value of threshold

voltage

Low level value of forward

slope resistance

2.32

2.34

(16.7% x π x I_T(AV)< I < π x I_T(AV)), T_J= T_Jmax.

(I > π x I_T(AV)), T_J= T_Jmax.

mΩ

High level value of forward

slope resistance

I_H

I_L

Maximum holding current

600

T_J= 25°C, I_T> 30A

Typical latching current

1000

T_J= 25°C, V_A= 12V, Ra = 6Ω, I_G= 1A

Switching

Parameter

ST083S

1000

Units Conditions

di/dt

Max. non-repetitive rate of rise

of turned-on current

T_J= T_Jmax, V_DRM= rated V_DRM

A/µs

I_TM= 2 x di/dt

T_J= 25°C, V_DM= rated V_DRM, I_TM= 50A DC, t = 1µs

Typical delay time

0.80

Resistive load, Gate pulse: 10V, 5Ω source

µs

T_J= T_Jmax, I_TM= 100A, commutating di/dt = 10A/µs

Min Max

Max. turn-off time

_R= 50V, t = 200µs, dv/dt = 200V/µs

Blocking

Parameter

ST083S

500

Units Conditions

dv/dt Maximum critical rate of rise of

off-state voltage

T_J= T_Jmax., linear to 80% V_DRM, higher value

V/µs

available on request

I_RRM

I_DRM

Max. peak reverse and off-state

leakage current

T_J= T_Jmax, rated V_DRM/V_RRMapplied

Triggering

Parameter

Maximum peak gate power

P_G(AV)Maximum average gate power

I_GMMax. peak positive gate current

ST083S

Units Conditions

P_GM

T_J= T_Jmax, f = 50Hz, d% = 50

T_J= T_Jmax, t ≤ 5ms

+V_GMMaximum peak positive

gate voltage

T_J= T_Jmax, t ≤ 5ms

-V_GMMaximum peak negative

gate voltage

I_GT

Max. DC gate current required

to trigger

200

T_J= 25°C, V_A= 12V, Ra = 6Ω

V_GT

Max. DC gate voltage required

to trigger

I_GD

Max. DC gate current not to trigger

T_J= T_Jmax, rated V_DRMapplied

V_GD

Max. DC gate voltage not to trigger

0.25

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