Datasheet > SSBD2060CT

SSBD2060CT

更新时间： 2024-02-28 06:31:01

品牌	Logo	应用领域
新硅能 - SILIKRON		/
页数	文件大小	规格书
6页	488K
描述
Main Product Characteristics

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中文翻译

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数据手册

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SSBD2060CT 数据手册

SSBD2060CT/CTF

Main Product Characteristics:

2×10A

60V

VRRM

T_j(max)

Vf(max)

150℃

0.63V

TO220

TO220F

SSBD2060CTF

Schematic Diagram

SSBD2060CT

Features and Benefits:



HighJunctionTemperature

HighESDProtection

HighForward&ReverseSurgecapability

Description:

Schottky Barrier Rectifier designed for high frequency switch model power supplies such as adaptors and DC/DC

convertors;thisproductspecialdesignforhighforwardandreversesurgecapability

Absolute Rating:

Symbol

Characterizes

Value

Unit

V_RRM

Peak Repetitive Reverse Voltage

V_R(RMS)

RMS Reverse Voltage

Per diode

I_F(AV)

Average Forward Current

Per device

I_FSM

I_RRM

T_J

Non Repetitive Surge Forward Current(tp=8.3ms sinusoidal)

Peak Repetitive Reverse Surge Current(Tp=2us)

Maximum operation Junction Temperature Range

Storage Temperature Range

180

-55~150

℃

T_stg

Thermal Resistance

Symbol

Characterizes

Maximum Thermal Resistance Junction To

Case(per leg)

Value

Unit

℃/W

R_θJC

TO220

TO220F

Electrical Characterizes @T_A=25℃ unless otherwise specified

Symbol

Characterizes

Min Typ Max Unit

Test Condition

I_R=0.5mA

V_R

Reverse Breakdown Voltage

0.63

0.59

0.2

I_F=10A, T_J=25℃

I_F=10A, T_J=125℃

V_R=60V, T_J=25℃

V_R=60V, T_J=125℃

V_F

I_R

Forward Voltage Drop

Leakage Current

©Silikron Semiconductor CO., LTD.

2011.5.26

www.silikron.com

Version: 2.1

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