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SPS120 PDF预览

SPS120

更新时间: 2024-09-28 20:57:43
品牌 Logo 应用领域
HUTSON 栅极
页数 文件大小 规格书
4页 342K
描述
Silicon Controlled Rectifier, 20A I(T)RMS, 20000mA I(T), 100V V(DRM), 100V V(RRM), 1 Element

SPS120 技术参数

生命周期:Contact Manufacturer包装说明:POST/STUD MOUNT, O-MUPM-D2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.30.00.80风险等级:5.75
外壳连接:ANODE配置:SINGLE
关态电压最小值的临界上升速率:200 V/us最大直流栅极触发电流:25 mA
最大直流栅极触发电压:2 V最大维持电流:50 mA
JESD-30 代码:O-MUPM-D2最大漏电流:1 mA
通态非重复峰值电流:200 A元件数量:1
端子数量:2最大通态电流:20000 A
最高工作温度:110 °C最低工作温度:-40 °C
封装主体材料:METAL封装形状:ROUND
封装形式:POST/STUD MOUNT认证状态:Not Qualified
最大均方根通态电流:20 A重复峰值关态漏电流最大值:1000 µA
断态重复峰值电压:100 V重复峰值反向电压:100 V
子类别:Silicon Controlled Rectifiers表面贴装:NO
端子形式:SOLDER LUG端子位置:UPPER
触发设备类型:SCRBase Number Matches:1

SPS120 数据手册

 浏览型号SPS120的Datasheet PDF文件第2页浏览型号SPS120的Datasheet PDF文件第3页浏览型号SPS120的Datasheet PDF文件第4页 
MAXIMUM RATINGS  
SYMBOL VDRM  
DEVICE NUMBERS UNITS  
50  
*S020  
*S120  
*S220  
*S420  
*S620  
*S025  
*S125  
*S225  
*S425  
*S625  
*S040  
*S140  
*S240  
*S440  
*S640  
100  
VDRM &  
200  
REPETITIVE PEAK OFF-STATE VOLTAGE AND  
REPETITIVE PEAK REVERSE VOLTAGE GATE OPEN,  
AND TJ = 110° C  
VOLT  
AMP  
VRRM  
400  
600  
RMS ON-STATE CURRENT AT TC = 80º C AND  
CONDUCTION ANGLE OF 360º  
IT(RMS)  
20  
25  
40  
PEAK SURGE (NON-REPETITIVE)  
ON-STATE CURRENT, ONE-CYCLE,  
AT 50HZ OR 60HZ  
ITSM  
200  
250  
2
400  
AMP  
AMP  
PEAK GATE - TRIGGER CURRENT FOR 3µSEC. MAX.  
PEAK GATE - POWER DISSIPATION AT IGT < IGTM  
IGTM  
PGM  
2
2
20  
0.5  
20  
0.5  
-40 to +150  
-40 to +110  
20  
0.5  
WATT  
WATT  
°C  
AVERAGE GATE - POWER DISSIPATION  
STORAGE TEMPERATURE RANGE  
OPERATING TEMPERATURE RANGE, TJ  
ELECTRICAL CHARACTERISTICS  
AT SPECIFIED CASE TEMPERATURE  
PG(AV)  
TSTG  
TOPER  
°C  
PEAK OFF - STATE CURRENT GATE OPEN,  
TC = 110° C VDRM & VRRM = MAX. RATING  
IDRM &  
IRRM  
MA  
MAX.  
1.0  
1.0  
1.0  
MAXIMUM ON - STATE VOLTAGE, (PEAK)  
AT TC = 25° C AND IT = RATED AMPS  
DC HOLDING CURRENT, GATE  
OPEN AND TC = 25° C  
VOLT  
MAX.  
MA  
VTM  
IHO  
1.9  
50  
1.5  
50  
1.6  
50  
MAX.  
CRITICAL RATE-OF-RISE OF OFF-  
STATE VOLTAGE, GATE OPEN, TC = 110° C  
CRITICAL  
dv/dt  
200  
200  
200  
V/µSEC.  
DC GATE-TRIGGER CURRENT FOR ANODE  
VOLTAGE = 12VDC, RL = 60 W AND AT TC = 25° C  
MA  
MAX.  
IGT  
25  
25  
25  
DC GATE - TRIGGER VOLTAGE FOR ANODE  
VOLTAGE = 12VDC, RL = 60 W AND AT TC = 25° C  
VOLT  
MAX.  
VGT  
T gt  
2.0  
2.5  
2.0  
2.5  
2.0  
2.5  
GATE-CONTROLLED TURN-ON TIME FOR  
TD + TR, IGT = 150 MA AND TC = 25° C  
µSEC.  
THERMAL RESISTANCE, JUNCTION-TO-CASE  
PRESSFIT  
STUD MOUNT  
1.3  
1.8  
2.0  
1.3  
1.8  
2.0  
0.9  
1.4  
1.6  
°C/WATT  
TYP  
RqJ-C  
ISOLATED - STUD MOUNT  
P
PRESS FIT  
WARNING  
SP  
PRESS FIT WITH STUD MOUNT  
Isolated stud products should be handled with care. The ceramic used  
in these thyristors contains BERYLLIUM OXIDE as a major ingredient.  
DO NOT crush, grind or abrade these portions of the thyristors because  
the dust resulting from such action may be HARZARDOUS if INHALED.  
SIP  
PRESS FIT WITH ISOLATED STUD MOUNT  
*Add prefix for package style desired.  
SOLID STATE CONTROL DEVICES  
44  

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