Datasheet > SPD61089A

SPD61089A

更新时间： 2024-04-09 18:59:44

品牌	Logo	应用领域
韦尔 - WILLSEMI		/
页数	文件大小	规格书
5页	341K
描述
大功率固体放电管 TSS

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SPD61089A 数据手册

SPD61089A

Electronics Characteristics (Ta=25^oC, unless otherwise noted)

Parameter

Symbol

Test Conditions

I_F=5A, t_W=200μs

Min

Typ

Max Unit

Forward voltage

V_F

2/10us, I_F=100A, R_S=50Ω,

di/dt=80A/us

Impulse peak forward recovery voltage

Off-state current

V_FRM

V_D= -170V, V_GK=0, T_J= 25 °C

V_D= -170V, V_GK=0, T_J= 85 °C

I_D

V_(BO)

I_H

-5

μA

2/10us, I_TM=100A, R_S=50Ω

di/dt=-80A/us, V_GG=-100V

Impulse breakover voltage

Holding current

-112

I_T=-1A, di/dt=1A/ms, V_GG=-100V

V_GG=V_GK= -167V, V_KA=0, T_J= 25 °C

V_GG=V_GK= -167V, V_KA=0, T_J= 85 °C

V_AK=40V,Value=3.5V, t_W=10ms

-150

Gate reverse curre

I_GAS

-5

μA

Gate trigger current

Gate trigger voltage

I_GT

V_AK=40V,Value=3.5V, t_W=10ms

f=1MHz,V_D=1V, I_G=0, V_D=-3V

f=1MHz,V_D=1V, I_G=0, V_D=-48V

V_GT

2.5

110

Anode-cathode offstate capacitance

C_KA

Surge Test Circuit

Pulse(μs)

Vp(V)

Ipp(A)

Rp(Ω)

R1(Ω)

R2(Ω)

T_rise

T_fall

700

1000

±1600

±300

±4600

±40

±30

±110

1.2

Will Semiconductor Ltd.

Jan, 2021 - Rev.1.2

1 234 5

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