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SP1N6623 PDF预览

SP1N6623

更新时间: 2024-09-30 19:50:19
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网二极管
页数 文件大小 规格书
4页 327K
描述
Rectifier Diode, Avalanche, 1 Element, 1A, Silicon, HERMETIC SEALED, GLASS PACKAGE-2

SP1N6623 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:O-LALF-W2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.73
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:O-LALF-W2JESD-609代码:e0
元件数量:1端子数量:2
最高工作温度:175 °C最低工作温度:-65 °C
最大输出电流:1 A封装主体材料:GLASS
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
参考标准:MIL-19500最大反向恢复时间:0.06 µs
表面贴装:NO技术:AVALANCHE
端子面层:TIN LEAD端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

SP1N6623 数据手册

 浏览型号SP1N6623的Datasheet PDF文件第2页浏览型号SP1N6623的Datasheet PDF文件第3页浏览型号SP1N6623的Datasheet PDF文件第4页 
1N6620 thru 1N6625  
VOIDLESS-HERMETICALLY SEALED  
ULTRA FAST RECOVERY GLASS  
RECTIFIERS  
S C O T T S D A L E D I V I S I O N  
DESCRIPTION  
APPEARANCE  
This “Ultrafast Recovery” rectifier diode series is military qualified to MIL-PRF-  
19500/585 and is ideal for high-reliability applications where a failure cannot be  
tolerated. These industry-recognized 1.5 to 2.0 Amp rated rectifiers for working  
peak reverse voltages from 200 to 1000 volts are hermetically sealed with voidless-  
glass construction using an internal “Category I” metallurgical bond. These devices  
are also available in surface mount MELF package configurations by adding a “US”  
suffix (see separate data sheet for 1N6620US thru 1N6625US). Microsemi also  
offers numerous other rectifier products to meet higher and lower current ratings  
with various recovery time speed requirements including standard, fast and ultrafast  
device types in both through-hole and surface mount packages.  
Package “A”  
Axial  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
FEATURES  
APPLICATIONS / BENEFITS  
Popular JEDEC registered 1N6620 to 1N6625 series  
Voidless hermetically sealed glass package  
Extremely robust construction  
Ultrafast recovery rectifier series 200 to 1000 V  
Military and other high-reliability applications  
Switching power supplies or other applications  
requiring extremely fast switching & low forward  
loss  
High forward surge current capability  
Low thermal resistance  
Triple-layer passivation  
Internal “Category I” Metallurgical bonds  
JAN, JANTX, and JANTXV available per MIL-PRF-  
19500/585  
Controlled avalanche with peak reverse power  
capability  
Further options for screening in accordance with  
MIL-PRF-19500 for JANS by using a “SP” prefix, e.g.  
SP6620, SP6624, etc.  
Inherently radiation hard as described in Microsemi  
MicroNote 050  
Surface mount equivalents also available in a square  
end-cap MELF configuration with “US” suffix (see  
separate data sheet for 1N6620US thru 1N6625US)  
MAXIMUM RATINGS  
MECHANICAL AND PACKAGING  
Junction Temperature: -65oC to +175oC  
Storage Temperature: -65oC to +175oC  
CASE: Hermetically sealed voidless hard glass  
with Tungsten slugs  
Peak Forward Surge Current @ 25oC: 20 Amps  
(except 1N6625 which is 15 Amps)  
TERMINATIONS: Axial-leads are Copper with  
Tin/Lead (Sn/Pb) finish  
MARKING: Body painted and part number, etc.  
POLARITY: Cathode indicated by band  
Tape & Reel option: Standard per EIA-296  
Weight: 340 mg  
Note: Test pulse = 8.3 ms, half-sine wave.  
Average Rectified Forward Current (IO) at TL= +55oC  
(L=.375 inch from body):  
1N6620 thru 1N6622: 2.0 Amps  
1N6623 thru 1N6625: 1.5 Amps  
(Derate linearly at 0.833%/oC for TL> +55oC)  
Average Rectified Forward Current (IO) at TA=25oC:  
1N6620 thru 1N6622: 1.2 Amps  
See package dimensions on last page  
1N6623 thru 1N6625: 1.0 Amp  
(Derate linearly at 0.67%/ oC for TA>+25oC. This IO  
rating is typical for PC boards where thermal  
resistance from mounting point to ambient is  
sufficiently controlled where TJ(max) is not exceeded.)  
Thermal Resistance L= 0.375 inch (RθJL): 38oC/W  
Capacitance at VR= 10 V: 10 pF  
Solder temperature: 260oC for 10 s (maximum)  
Copyright © 2008  
6-24-2008 REV B  
Microsemi  
Page 1  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  

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