Datasheet > SML010FBDH06

SML010FBDH06

更新时间： 2022-03-18 00:14:13

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描述
Silicon Carbide Power

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数据手册

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SML010FBDH06 数据手册

SILICON CARBIDE POWER

SCHOTTKY RECTIFIER

DIODE BRIDGE

SML010FBDH06

•

600V, 10A Full Bridge Rectifier Configuration

High Temperature Operation Tj = 200°C

Effective Zero Reverse and Forward Recovery

High Speed Low Loss Switching

High Frequency Operation

High-Reliability Screening Options Available

ABSOLUTE MAXIMUM RATINGS (Per Die, T = 25°C unless otherwise stated)

Repetitive Peak Reverse Breakdown Voltage

Surge Peak Reverse Voltage

DC Blocking Voltage

600V

RRM

RSM

600V

Average Forward Current

10A

F(AVG)

FSM

Non Repetitive Peak Forward Surge Current, t = 10µs

45A

Junction Temperature Range

Storage Temperature Range

-55 to +200°C

-55 to +225°C

stg

THERMAL PROPERTIES (Per Die)

Symbols

Parameters

Max.

2.0

Units

Thermal Resistance, Junction To Case

°C/W

θJC

ELECTRICAL CHARACTERISTICS (Per Die, T = 25°C unless otherwise stated)

Symbols

Parameters

Test Conditions

Min. Typ. Max. Units

I = 10A

1.8

2.0

2.2

2.7

(1)

Forward Voltage

T = 175°C

V = V

100

1000

RRM

Reverse Current

µA

T = 175°C

DYNAMIC CHARACTERISTICS

I = 10A

di/dt = 500A/µs

V = 600V

T = 25°C

Total Capacitative

Charge

Notes

(1) Pulse Width ≤ 300us, δ ≤ 2%

Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.

Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However

Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to

verify that datasheets are current before placing orders.

Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB

Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com

Document Number 8966

Issue 1

Page 1 of 1

Website: http://www.semelab-tt.com

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