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SMCJ6061A PDF预览

SMCJ6061A

更新时间： 2024-09-27 22:53:43
品牌 Logo 应用领域
美高森美 - MICROSEMI 瞬态抑制器二极管光电二极管局域网
页数 文件大小 规格书
4页 261K
描述
5.5 thru 185 Volts 1500 Watts Transient Voltage Suppressors

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中文翻译

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SMCJ6061A 技术参数

是否无铅：含铅是否Rohs认证：不符合
生命周期：Obsolete零件包装代码：DO-214AB
包装说明：R-PDSO-C2针数：2
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8541.10.00.50风险等级：5.41
Is Samacsys：N其他特性：LOW INDUCTANCE
最大击穿电压：86.1 V最小击穿电压：77.9 V
配置：SINGLE二极管元件材料：SILICON
二极管类型：TRANS VOLTAGE SUPPRESSOR DIODEJEDEC-95代码：DO-214AB
JESD-30 代码：R-PDSO-C2JESD-609代码：e0
最大非重复峰值反向功率耗散：1500 W元件数量：1
端子数量：2封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性：BIDIRECTIONAL
最大功率耗散：5 W认证状态：Not Qualified
最大重复峰值反向电压：70 V表面贴装：YES
技术：AVALANCHE端子面层：TIN LEAD
端子形式：C BEND端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

SMCJ6061A 数据手册

 浏览型号SMCJ6061A的Datasheet PDF文件第2页浏览型号SMCJ6061A的Datasheet PDF文件第3页浏览型号SMCJ6061A的Datasheet PDF文件第4页 
8700 E. Thomas Road  
Scotsdale, AZ 85252  
Phone: (480) 941-6300  
Fax:  
(480) 947-1503  
SMCG/J6036  
thru  
FEATURES:  
SMCG/J6072A  
·
·
·
·
·
BIDIRECTIONAL  
1500 WATTS PEAK POWER  
VOLTAGE RANGE FROM 5.5V TO 185V  
LOW INDUCTANCE  
LOW PROFILE PACKAGE FOR SURFACE MOUNTING  
5.5 thru 185 Volts  
1500 Watts  
Transient Voltage  
Suppressors  
DESCRIPTION:  
These Transient Voltage Suppressor devices are a series of Bi-directional Silicon  
Transient Suppressors used in AC applications where large voltage transients can  
permanently damage voltage-sensitive components.  
These devices are manufactured using two silicon PN, junctions in a back to back  
configuration. They are characterized by their high surge capability, fast response  
time, and low impedance, (Ron) for clamping surge.  
The SMC series, rated for 1500 watts during a one millisecond pulse, can be used to  
protect sensitive circuits against transients induced by lighting and inductive load  
switching. The response time of TAZ clamping action is less than (5x10 -9) sec;  
therefore, they can protect Integrated Circuits, MOS devices, Hybrids, and other  
voltage-sensitive semiconductors and components. This series of devices has also  
been proven very effective as EMP and ESD suppressors.  
DO-215AB  
DO-214AB  
MAXIMUM RATINGS:  
1500 watts of peak pulse power dissipation at 25°C  
tclamping (0 volts to V(BR) min): less than 5 x 10-9 seconds  
Operating and Storage Temperature: -65° to +150°C  
Steady state power dissipation: 5.0 watts at TL = 25°C, at mounting plane.  
Repetition rate (duty cycle): .01%  
Mechanical  
Characteristics  
CASE: Molded, Surface  
Mountable.  
100  
(Wave Form - See  
Figure 2)  
Non- Repetitive  
TERMINALS: Gull-wing or C-Bend  
(modified J-bend) leads, tin lead  
plated  
10  
POLARITY: No markings on  
bi-directional devices.  
1.0  
0.1  
PACKAGING: 16mm tape (See EIA  
Std. RS-481.)  
THERMAL RESISTANCE: 20°C/W  
(typical) junction to lead (tab) at  
mounting plane.  
1µs  
100ns  
10µs  
100µs  
1ms  
10ms  
tp Pulse Time  
Figure 1  
Peak Pulse Power vs Pulse Time  
MSC1364.PDF 01/06/00  
1234

中文翻译

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