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SMBJ45CA-E3/52 PDF预览

SMBJ45CA-E3/52

更新时间: 2024-01-29 09:39:45
品牌 Logo 应用领域
威世 - VISHAY 局域网PC光电二极管电视
页数 文件大小 规格书
5页 114K
描述
DIODE 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC, SMBJ, 2 PIN, Transient Suppressor

SMBJ45CA-E3/52 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active零件包装代码:DO-214AA
包装说明:R-PDSO-C2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:0.69
Samacsys Confidence:4Samacsys Status:Released
2D Presentation:https://componentsearchengine.com/2D/0T/905446.1.1.pngSchematic Symbol:https://componentsearchengine.com/symbol.php?partID=905446
PCB Footprint:https://componentsearchengine.com/footprint.php?partID=9054463D View:https://componentsearchengine.com/viewer/3D.php?partID=905446
Samacsys PartID:905446Samacsys Image:https://componentsearchengine.com/Images/9/SMBJ45CA-E3/52.jpg
Samacsys Thumbnail Image:https://componentsearchengine.com/Thumbnails/1/SMBJ45CA-E3/52.jpgSamacsys Pin Count:2
Samacsys Part Category:TVS Diode (Bi-directional)Samacsys Package Category:Diodes Moulded
Samacsys Footprint Name:DO-214AA (SMB)Samacsys Released Date:2017-12-29 09:34:33
Is Samacsys:N其他特性:EXCELLENT CLAMPING CAPABILITY, UL RECOGNIZED
最大击穿电压:55.3 V最小击穿电压:50 V
击穿电压标称值:52.65 V最大钳位电压:72.7 V
配置:SINGLE二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJEDEC-95代码:DO-214AA
JESD-30 代码:R-PDSO-C2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值反向功率耗散:600 W
元件数量:1端子数量:2
最高工作温度:150 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性:BIDIRECTIONAL认证状态:Not Qualified
最大重复峰值反向电压:45 V子类别:Transient Suppressors
表面贴装:YES技术:AVALANCHE
端子面层:Matte Tin (Sn)端子形式:C BEND
端子位置:DUAL处于峰值回流温度下的最长时间:30
Base Number Matches:1

SMBJ45CA-E3/52 数据手册

 浏览型号SMBJ45CA-E3/52的Datasheet PDF文件第2页浏览型号SMBJ45CA-E3/52的Datasheet PDF文件第3页浏览型号SMBJ45CA-E3/52的Datasheet PDF文件第4页浏览型号SMBJ45CA-E3/52的Datasheet PDF文件第5页 
SMBJ5.0A thru SMBJ188A  
Vishay General Semiconductor  
www.vishay.com  
®
Surface Mount TRANSZORB  
Transient Voltage Suppressors  
FEATURES  
• Low profile package  
• Ideal for automated placement  
• Glass passivated chip junction  
• Available in uni-directional and bi-directional  
Available  
• 600 W peak pulse power capability with a  
10/1000 μs waveform, repetitive rate (duty  
cycle): 0.01 %  
• Excellent clamping capability  
• Very fast response time  
• Low incremental surge resistance  
SMB (DO-214AA)  
• Meets MSL level 1, per J-STD-020, LF maximum peak  
of 260 °C  
• AEC-Q101 qualified available  
- Automotive ordering code: base P/NHE3 or P/NHM3  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
PRIMARY CHARACTERISTICS  
TYPICAL APPLICATIONS  
VBR (bi-directional)  
6.4 V to 231 V  
Use in sensitive electronics protection against voltage  
transients induced by inductive load switching and lighting  
on ICs, MOSFET, signal lines of sensor units for consumer,  
computer, industrial, and telecommunication.  
V
BR (uni-directional)  
6.4 V to 231 V  
5.0 V to 188 V  
600 W  
VWM  
PPPM  
IFSM (uni-directional only)  
TJ max.  
100 A  
MECHANICAL DATA  
150 °C  
Case: SMB (DO-214AA)  
Polarity  
Uni-directional, bi-directional  
SMB (DO-214AA)  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS-compliant, commercial grade  
Base P/N-M3 - halogen-free, RoHS-compliant, commercial  
grade  
Package  
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified  
Base P/NHM3_X - halogen-free, RoHS-compliant, and  
AEC-Q101 qualified  
(“_X” denotes revision code e.g. A, B, ...)  
DEVICES FOR BI-DIRECTION APPLICATIONS  
Terminals: matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3, M3, HE3, and HM3 suffix meets JESD 201 class 2  
whisker test  
For bi-directional devices use CA suffix (e.g. SMBJ10CA).  
Electrical characteristics apply in both directions.  
Polarity: for uni-directional types the band denotes cathode  
end, no marking on bi-directional types  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
PPPM  
VALUE  
600  
UNIT  
W
Peak pulse power dissipation with a 10/1000 μs waveform (1)(2) (fig. 1)  
Peak pulse current with a 10/1000 μs waveform (1)  
IPPM  
See next table  
100  
A
Peak forward surge current 8.3 ms single half sine-wave uni-directional only (2)  
Operating junction and storage temperature range  
IFSM  
A
TJ, TSTG  
-55 to +150  
°C  
Notes  
(1)  
Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2  
Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal  
(2)  
Revision: 24-Jan-2019  
Document Number: 88392  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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