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SMBJ100 PDF预览

SMBJ100

更新时间: 2024-06-27 12:03:33
品牌 Logo 应用领域
合科泰 - HOTTECH /
页数 文件大小 规格书
6页 865K
描述
SMB(DO-214AA)

SMBJ100 技术参数

是否Rohs认证:符合生命周期:Active
零件包装代码:DO-214AA包装说明:R-PDSO-C2
针数:2Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
Factory Lead Time:17 weeks风险等级:0.74
Is Samacsys:N最小击穿电压:111 V
最大钳位电压:212 V配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码:DO-214AAJESD-30 代码:R-PDSO-C2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值反向功率耗散:4000 W元件数量:1
端子数量:2最高工作温度:150 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性:BIDIRECTIONAL
最大功率耗散:5 W认证状态:Not Qualified
最大重复峰值反向电压:100 V子类别:Transient Suppressors
表面贴装:YES技术:AVALANCHE
端子面层:Matte Tin (Sn) - annealed端子形式:C BEND
端子位置:DUAL处于峰值回流温度下的最长时间:30
Base Number Matches:1

SMBJ100 数据手册

 浏览型号SMBJ100的Datasheet PDF文件第2页浏览型号SMBJ100的Datasheet PDF文件第3页浏览型号SMBJ100的Datasheet PDF文件第4页浏览型号SMBJ100的Datasheet PDF文件第5页浏览型号SMBJ100的Datasheet PDF文件第6页 
SMBJ5.0(A) thru SMBJ440(A)  
TVS DIODE  
FEATURES  
Built-in strain relief  
Glass passivated junction  
Low inductance  
Excellent clamping capability  
Repetition Rate (duty cycle):0.01%  
Fast response time: typically less than 1.0ps  
from 0 Volts to V(BR) for unidirectional types  
Typical IR less than 1mA above 10V  
High temperature soldering guaranteed: 260°C/10 seconds,  
Surface Mount device  
MECHANICAL DATA  
Case: SMB(DO-214AA)  
Case Material: Molded Plastic. UL flammability  
Classification Rating: 94V-0  
Weight: 0.088 grams (approximate)  
MAXIMUM RATINGS AND CHARACTERISTICS(TA = 25°C unless otherwise noted)  
Value  
600  
UNIT  
Parameter  
Symbol  
Peak power dissipation with a 10/1000ȝs waveform(1)  
PPP  
W
Peak pulse current wih a 10/1000ȝs waveform(1)  
Power dissipation on infinite heatsink at TL = 75 °C  
Peak forward surge current, 8.3 ms single half sine-  
IPP  
PD  
See Next Table  
5.0  
A
W
IFSM  
100  
A
wave unidirectional only(2)  
Maximum instantaneous forward voltage at 50 A for  
unidirectional only(3)  
VF  
3.5/5.0  
V
Operating junction and storage temperature range  
TJ, TSTG  
–55 to +150  
°C  
Note:  
(1)Non-repetitive current pulse per Fig.5 and derated above TA= 25 °C per Fig.1  
(2)Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum  
(3)VF<3.5V for devices of VBR<200V and VF<5.0V for devices of VBR>201V  
1 / 6  
©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD  
E-mail:hkt@heketai.com  

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