Datasheet > SMBG40C-51

SMBG40C-51

更新时间： 2024-02-20 01:27:22

品牌	Logo	应用领域
威世 - VISHAY		局域网光电二极管电视
页数	文件大小	规格书
4页	1984K
描述
600W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-215AA, PLASTIC, SMBG, 2 PIN

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

SMBG40C-51 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
零件包装代码：	DO-215AA	包装说明：	PLASTIC, SMBG, 2 PIN
针数：	2	Reach Compliance Code：	unknown
风险等级：	5.77	Is Samacsys：	N
其他特性：	UL RECOGNIZED	最大击穿电压：	54.3 V
最小击穿电压：	44.4 V	配置：	SINGLE
二极管元件材料：	SILICON	二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码：	DO-215AA	JESD-30 代码：	R-PDSO-G2
JESD-609代码：	e0	湿度敏感等级：	NOT SPECIFIED
最大非重复峰值反向功率耗散：	600 W	元件数量：	1
端子数量：	2	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性：	BIDIRECTIONAL
认证状态：	Not Qualified	最大重复峰值反向电压：	40 V
表面贴装：	YES	技术：	AVALANCHE
端子面层：	TIN LEAD	端子形式：	GULL WING
端子位置：	DUAL	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

SMBG40C-51 数据手册

SMBG5.0 thru 188CA

Vishay Semiconductors

formerly General Semiconductor

Surface Mount TRANSZORB^®

Transient Voltage Suppressors

Stand-off Voltage 5.0 to 188V

Peak Pulse Power 600W

DO-215AA (SMBG)

Cathode Band

Mounting Pad Layout

0.083 (2.10)

0.077 (1.96)

0.155 (3.94)

0.130 (3.30)

0.165 (4.19)

0.085 (2.16)

0.060(1.27)

Dimensions in inches

and (millimeters)

0.180 (4.57)

0.160 (4.06)

0.095 (2.41)

0.075 (1.90)

0.008 (0.20)

0.004 (0.10)

0.016 (0.41)

0.006 (0.15)

0.058 (1.47)

0.038 (0.97)

SEATING

PLANE

0.030 (0.76)

0.015 (0.38)

0.020

(0.51) Max.

0.255 (6.48)

0.235 (5.97)

Features

Mechanical Data

• Underwriters Laboratory Recognition under UL standard

for safety 497B: Isolated Loop Circuit Protection

Case: JEDEC DO-215AA molded plastic over

passivated junction

Terminals: Solder plated, solderable per

MIL-STD-750, Method 2026

• Low profile package with built-in strain relief for surface

mounted applications

Polarity: For unidirectional types the band denotes the

cathode, which is positive with respect to the anode

under normal TVS operation

Weight: 0.003 oz., 0.093 g

Flammability: Epoxy is rated UL 94V-0

• Glass passivated junction

• Low incremental surge resistance, excellent clamping

capability

• 600W peak pulse power capability with a 10/1000µs

waveform, repetition rate (duty cycle): 0.01%

Packaging Codes – Options (Antistatic):

51 – 2K per Bulk box, 20K/carton

• Very fast response time

• High temperature soldering guaranteed:

250°C/10 seconds at terminals

52 – 750 per 7" plastic Reel (12mm tape), 15K/carton

5B – 3.2K per 13" plastic Reel (12mm tape), 32K/carton

Devices for Bidirectional Applications

For bi-directional devices, use suffix C or CA (e.g. SMBJ10C, SMBJ10CA). Electrical characteristics apply in both directions.

Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.

Parameter

Symbol

P_PPM

I_PPM

Value

Minimum 600

See Table Below

100

Unit

Peak pulse power dissipation with

a 10/1000µs waveform⁽¹⁾⁽²⁾(Fig. 1)

Peak pulse current with a 10/1000µs waveform⁽¹⁾

Peak forward surge current 8.3ms single half sine-wave

uni-directional only⁽²⁾

I_FSM

Typical thermal resistance, junction to ambient⁽⁴⁾

100

°C/W

°C

θJA

Typical thermal resistance, junction to lead

θJL

Operating junction and storage temperature range

T_J, T_STG

–55 to +150

Notes: (1) Non-repetitive current pulse, per Fig.3 and derated above T = 25°C per Fig. 2

(2) Mounted on 0.2 x 0.2” (5.0 x 5.0mm) copper pads to each terminal

(3) Mounted on minimum recommended pad layout

Document Number 88456

24-Jul-03

www.vishay.com

12 3 4

中文翻译

下载PDF

与SMBG40C-51相关器件

型号	品牌	获取价格	描述	数据表
SMBG40C-5B	VISHAY	获取价格	600W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-215AA, PLASTIC, SMBG, 2 PIN
SMBG40CA	VISHAY	获取价格	Trans Voltage Suppressor Diode, 600W, 40V V(RWM), Bidirectional, 1 Element, Silicon, DO-21
SMBG40CA/TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 600W, 40V V(RWM), Bidirectional, 1 Element, Silicon, DO-21
SMBG40CA-51	VISHAY	获取价格	600W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-215AA, PLASTIC, SMBG, 2 PIN
SMBG40CA-5B	VISHAY	获取价格	600W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-215AA, PLASTIC, SMBG, 2 PIN
SMBG40CAE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 600W, 40V V(RWM), Bidirectional, 1 Element, Silicon, DO-21
SMBG40CA-E3/51	VISHAY	获取价格	DIODE 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-215AA, PLASTIC, SMBG, 2 PIN, Transient
SMBG40CA-E3/52	VISHAY	获取价格	DIODE 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-215AA, ROHS COMPLIANT, PLASTIC, SMBG, 2
SMBG40CA-E3/5B	VISHAY	获取价格	TVS DIODE 40V 64.5V DO215AA
SMBG40CAE3/TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 600W, 40V V(RWM), Bidirectional, 1 Element, Silicon, DO-21

与SMBG40C-51相关文章

BSS138LT3G：一款高效能N沟道MOSFET的全面解析
2024-07-04

9
解读EGP10B二极管资料手册：产品特性、参数分析
2024-07-04

9
RT9164AGG手册资料详解：引脚信息、设计指南
2024-07-04

11
2SA1037KPT资料详解：产品特性、电气参数、设计指南
2024-07-04

13

产品中心

服务支持

精选活动

关于我们

帮助中心

SMBG40C-51

SMBG40C-51 技术参数

SMBG40C-51 数据手册

与SMBG40C-51相关器件

与SMBG40C-51相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

SMBG40C-51

SMBG40C-51 技术参数

SMBG40C-51 数据手册

与SMBG40C-51相关器件

与SMBG40C-51相关文章

您还可以找

您在本页遇到什么问题？