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SM8S17A2E PDF预览

SM8S17A2E

更新时间: 2024-02-11 19:57:20
品牌 Logo 应用领域
威世 - VISHAY 局域网二极管
页数 文件大小 规格书
3页 62K
描述
Trans Voltage Suppressor Diode, 5200W, 17V V(RWM), Unidirectional, 1 Element, Silicon, DO-218AB

SM8S17A2E 技术参数

是否Rohs认证: 不符合生命周期:Transferred
包装说明:R-PSSO-C1Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.44其他特性:PATENTED DEVICE
最大击穿电压:20.9 V最小击穿电压:18.9 V
击穿电压标称值:19.9 V外壳连接:ANODE
最大钳位电压:27.6 V配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码:DO-218ABJESD-30 代码:R-PSSO-C1
JESD-609代码:e0最大非重复峰值反向功率耗散:5200 W
元件数量:1端子数量:1
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性:UNIDIRECTIONAL
最大功率耗散:8 W认证状态:Not Qualified
最大重复峰值反向电压:17 V子类别:Transient Suppressors
表面贴装:YES技术:AVALANCHE
端子面层:Tin/Lead (Sn/Pb)端子形式:C BEND
端子位置:SINGLEBase Number Matches:1

SM8S17A2E 数据手册

 浏览型号SM8S17A2E的Datasheet PDF文件第2页浏览型号SM8S17A2E的Datasheet PDF文件第3页 
SM8S Series  
Surface Mount Automotive  
Transient Voltage Suppressors  
Stand-off Voltage 10 to 36V  
Peak Pulse Power 6600W (10/1000µs)  
5200W (10/10,000µs)  
DO-218AB  
0.628(16.0)  
0.592(15.0)  
0.539(13.7)  
0.524(13.3)  
0.116(3.0)  
0.093(2.4)  
Mounting Pad Layout  
0.413(10.5) 0.342(8.7)  
0.374(9.5) 0.327(8.3)  
0.091(2.3)  
0.067(1.7)  
0.116(3.0)  
0.366(9.3)  
0.343(8.7)  
0.413(10.5)  
0.093(2.4)  
0.374(9.5)  
Dimensions in  
inches and (millimeters)  
0.406(10.3)  
0.382(9.7)  
0.150(3.8)  
0.126(3.2)  
LEAD 1  
0.366(9.3)  
0.343(8.7)  
0.138(3.5)  
0.098(2.5)  
0.197(5.0)  
0.185(4.7)  
0.606(15.4)  
0.583(14.8)  
0.028(0.7)  
0.020(0.5)  
*
Patent #’s:  
0.016 (0.4) Min.  
4,980,315  
5,166,769  
5,278,095  
0.098(2.5)  
0.059(1.5)  
LEAD 2/METAL HEATSINK  
Mechanical Data  
Features  
Case: Molded plastic body, surface mount with heatsink  
integrally mounted in the encapsulation  
• Ideally suited for load dump protection  
• Plastic package has Underwriters Laboratory  
Flammability Classification 94V-0  
• High temperature stability due to unique oxide passiva-  
tion and patented PAR® construction  
• Integrally molded heatsink provides a very low thermal  
resistance for maximum heat dissipation  
• Low leakage current at TJ = 175°C  
Terminals: Plated, solderable per MIL-STD-750, Method 2026  
Polarity: Heatsink is anode  
Mounting Position: Any  
Weight: 0.091oz., 2.58g  
Packaging codes/options:  
• High temperature soldering guaranteed:  
260°C for 10 seconds at terminals  
• Meets ISO7637-2 surge spec.  
2D/750 per 13” Reel (16mm Tape),  
anode towards sprocket hole, 4.5K/box  
2E/750 per 13” Reel (16mm Tape),  
cathode towards sprocket hole, 4.5K/box  
• Low forward voltage drop  
Maximum Ratings and Thermal Characteristics(T = 25°C unless otherwise noted)  
C
Parameter  
Symbol  
Value  
Unit  
Peak pulse power dissipation with 10/1000µs waveform  
10/10,000µs waveform  
6600  
5200  
PPPM  
W
Steady state power dissipation  
PD  
IPPM  
8.0  
See Table 1  
700  
W
A
Peak pulse current with a 10/1000µs waveform(1)  
Peak forward surge current, 8.3ms single half sine-wave  
Typical thermal resistance junction to case  
Operating junction and storage temperature range  
IFSM  
A
RθJC  
0.90  
°C/W  
°C  
TJ, TSTG  
-55 to +175  
Notes: (1) Non-repetitive current pulse derated above TA=25°C  
8/28/01  

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