Datasheet > SM74101X/NOPB

SM74101X/NOPB

更新时间： 2022-12-01 22:08:28

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德州仪器 - TI		/
页数	文件大小	规格书
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SM74101X/NOPB

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SM74101X/NOPB 数据手册

April 2006

LM5112

Tiny 7A MOSFET Gate Driver

General Description

Features

n Compound CMOS and bipolar outputs reduce output

current variation

The LM5112 MOSFET gate driver provides high peak gate

drive current in the tiny LLP-6 package (SOT23 equivalent

footprint) or an 8-Lead exposed-pad MSOP package, with

improved power dissipation required for high frequency op-

eration. The compound output driver stage includes MOS

and bipolar transistors operating in parallel that together sink

more than 7A peak from capacitive loads. Combining the

unique characteristics of MOS and bipolar devices reduces

drive current variation with voltage and temperature. Under-

voltage lockout protection is provided to prevent damage to

the MOSFET due to insufficient gate turn-on voltage. The

LM5112 provides both inverting and non-inverting inputs to

satisfy requirements for inverting and non-inverting gate

drive with a single device type.

n 7A sink/3A source current

n Fast propagation times (25 ns typical)

n Fast rise and fall times (14 ns/12 ns rise/fall with 2 nF

load)

n Inverting and non-inverting inputs provide either

configuration with a single device

n Supply rail under-voltage lockout protection

n Dedicated input ground (IN_REF) for split supply or

single supply operation

n Power Enhanced 6-pin LLP package (3.0mm x 3.0mm)

or thermally enhanced MSOP8-EP package

n Output swings from V_CCto V_EEwhich can be negative

relative to input ground

Block Diagram

20066801

Block Diagram of LM5112

DS200668

www.national.com

123 4 5 6 7...12

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